Growth of a Si0.50Ge0.50 crystal by the traveling liquidus-zone (TLZ) method in microgravity

Kinoshita, Kyôichi; Arai, Yasutomo; Inatomi, Yuko; Tsukada, Takao; Adachi, Satoshi; Matsubara, Hiroaki; Tanaka, Ryota; Yoshikawa, Jun–ichi; Kihara, Takashi; Tomioka, Hiroshi; Shibayama, H.; Kubota, Yoshinobu; Warashina, Yoshiro; Sasaki, Yukichi; Ishizuka, Yoshiki; Harada, Yasunori; Wada, Satoshi; Harada, C.; Ito, Taichi; Takayanagi, M.; Yoda, Shinichi

doi:10.1016/j.jcrysgro.2013.11.020

Cited by 18 publications

(2 citation statements)

References 16 publications

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“…In a space experiment where convection in a melt is suppressed, a 17-mm-long Si 0.5 Ge 0.5 crystal was grown. 26) Therefore, the suppression of convection is necessary in order to increase the growth length on the ground. Magnetic field application is one means of suppressing convection in a melt.…”

Section: Discussionmentioning

confidence: 99%

Growth of 2 inch Si_0.5Ge_0.5bulk single crystals

Kinoshita

Arai

Nakatsuka

et al. 2015

Jpn. J. Appl. Phys.

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Two inch homogeneous Si0.5Ge0.5 bulk single crystals were grown by the traveling liquidus zone (TLZ) method for fabricating substrates for strained Si and strained Ge devices. The concentration variation was less than 1% for the whole area of a disc sliced perpendicular to the growth axis, showing excellent compositional uniformity. The axial compositional variation was less than 2% over a length of 5 mm. The FWHM values of X-ray rocking curves for 004 diffraction were in the range between 31 and 47 arcsec, showing excellent crystallinity. Such small FWHM values prove the elimination of the mosaic structure, which is a major issue in SiGe buffer layers on Si substrates.

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Section: Discussionmentioning

confidence: 99%

Growth of 2 inch Si_0.5Ge_0.5bulk single crystals

Kinoshita

Arai

Nakatsuka

et al. 2015

Jpn. J. Appl. Phys.

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“…In 2014, Japanese researchers of Nobeoka et al [3] have reported the numerical simulations of InGaSb crystal growth crystal growth by temperature gradient method on board at the ISS to get a complete understanding for the transport phenomena occurring in the melt system, i.e., in the microgravity fields. Kinoshita et al [4] have grown a silicon germanium alloy crystal Si0.5Ge0.5 with 10 mm in diameter by traveling liquidus-zone method in microgravity. Abe et al [5] have studied the numerical simulations of SiGe crystal growth by traveling liquidus-zone method under the microgravity environments.…”

Section: Introductionmentioning

confidence: 99%

Numerical Analysis for Impurity Effects on Diffusive-convection Flow Fields by Physical Vapor Transport under Terrestrial and Microgravity Conditions: Applications to Mercurous Chloride

Kim¹,

Kwon²

2016

Applied Chemistry for Engineering

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In this study, impurity effects on diffusive-convection flow fields by physical vapor transport under terrestrial and microgravity conditions were numerically analyzed for the mixture of Hg2Cl2-I2 system. The numerical analysis provides the essence of diffusive-convection flow as well as heat and mass transfer in the vapor phase during the physical vapor transport through velocity vector flow fields, streamlines, temperature, and concentration profiles. The total molar fluxes at the crystal regions were found to be much more sensitive to both the gravitational acceleration and the partial pressure of component I2 as an impurity. Our results showed that the solutal effect tended to stabilize the diffusive-convection flow with increasing the partial pressure of component I2. Under microgravity conditions below 10 -3 g0, the flow fields showed a one-dimensional parabolic flow structure indicating a diffusion-dominant mode. In other words, at the gravitational levels less than 10 -3 g0, the effects of convection would be negligible.

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