Growth of 2 inch Si<sub>0.5</sub>Ge<sub>0.5</sub>bulk single crystals

Kinoshita, Kyôichi; Arai, Yasutomo; Nakatsuka, Osamu; Taguchi, Keisuke; Tomioka, Hiroshi; Tanaka, Ryota; Yoda, Shinichi

doi:10.7567/jjap.54.04dh03

Cited by 13 publications

(6 citation statements)

References 29 publications

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“…By conventional Czochralski technique 5 single crystals of alloys could be grown, but only for the case of Ge or Si rich alloys. By traveling liquidus zone method 6, 7 single crystals of the Si 50 Ge 50 alloy could be prepared, but the size was limited to 2 mm in diameter due to gravity-driven convection and subsequent segregation. However, the growth of large size Si 50 Ge 50 single crystals was reported recently on board the ISS under microgravity (µg) conditions.…”

Section: Introductionmentioning

confidence: 99%

Contactless processing of SiGe-melts in EML under reduced gravity

et al. 2016

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The processing of semiconductors based on electromagnetic levitation is a challenge, because this kind of materials shows a poor electrical conductivity. Here, we report the results of measurements of the thermophysical properties obtained recently from highly doped semiconductors Si1−xGex under microgravity conditions in the framework of parabola flight campaigns. Due to the limited time of about 20 s of microgravity especially Ge-rich samples with low melting temperatures were investigated. The measurements were performed contactlessly by video techniques with subsequent digital image processing. Linear and volume thermal expansion coefficients were measured hereby from image data. An anomaly of volume changes near the solidus temperature is visible. Viscosity and surface tension were determined by the oscillating drop technique using optic and electronic data. It was observed that the alloying of Si into Ge increases the surface tension of the melts. The viscosity is following an Arrhenius equation and shows a crossover temperature which separates simple liquid at high temperatures from cooperative liquid at low temperatures.

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Section: Introductionmentioning

confidence: 99%

Contactless processing of SiGe-melts in EML under reduced gravity

et al. 2016

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“…TO-phonon-assisted lines of each sample derived from Si spacers are almost the same full width at half maximum (FWHM), which indicates that there is no difference in sample temperature. The SL and nanodots show significantly strong SiGe-derived PL, compared to the single crystalline bulk Si 0.68 Ge 0.32 26) as shown in Fig. 3(b), which indicates that carrier confinement occurs in the SL and the nanodots.…”

Section: Optical Properties Evaluation Of the Self-ordered Multilayer...mentioning

confidence: 89%

Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy

Ito,

Yokogawa,

Wen

et al. 2024

Jpn. J. Appl. Phys.

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The strain state, optical properties, and band structure of the self-ordered multilayered silicon-germanium (SiGe) nanodots, which are staggered and dot-on-dot alignment and embedded by Si spacer, were evaluated by Raman spectroscopy and low-temperature Photoluminescence (PL). These results suggest that the compressive strain applied to the staggered nanodots is smaller than that of the dot-on-dot nanodots, which contributes to the shrinking of the bandgap of the staggered nanodots. Strong PL intensity was observed from the nanodots compared to the single crystalline bulk SiGe due to the carrier confinement and high crystal quality of the nanodots. The stack-controlled nanodots showed a redshift of the PL peaks compared to the bulk SiGe and the effect of strain induced in SiGe nanodots might not be enough to explain this phenomenon. The cause of the redshift was clarified by considering the hetero band structure of the nanodots and the tensile strained spacer.

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“…Single-crystalline SiGe samples were prepared for Raman spectroscopy by two growth methods: Czochralski (Cz) [26][27][28] and traveling liquidus zone (TLZ). [29][30][31] The sample characteristics are summarized in Table I. The crystal orientation, Ge fraction, and the full width at half maximum (FWHM) were confirmed by X-ray diffraction (XRD).…”

Section: Methodsmentioning

confidence: 99%

Temperature Dependence of Raman Peak Shift in Single-Crystalline Silicon-Germanium

Sugawa¹,

Yokogawa²,

Yoshioka³

et al. 2023

ECS J. Solid State Sci. Technol.

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We demonstrate the relationship between Raman shift ω and temperature T (dω/dT) of silicon-germanium (SiGe) for Si-Si, Si-Ge, and Ge-Ge vibration modes which should be useful in local temperature evaluation of SiGe devices at submicron levels. We investigated the dω/dT of single-crystalline SiGe for Si-Si, Si-Ge, and Ge-Ge vibration modes and its dependence on the Ge fraction using variable-temperature Raman spectroscopy. We clarified that the (dω/dT)s for Si-Si, Si-Ge, and Ge-Ge are fairly constant for all single-crystalline SiGe samples. Therefore, the anharmonic vibration of Si-Si, Si-Ge, and Ge-Ge modes has no Ge-fraction dependence in SiGe. The peak shifts help define the temperature on the submicron-scale surface.

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Growth of 2 inch Si_0.5Ge_0.5bulk single crystals

Cited by 13 publications

References 29 publications

Contactless processing of SiGe-melts in EML under reduced gravity

Contactless processing of SiGe-melts in EML under reduced gravity

Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy

Temperature Dependence of Raman Peak Shift in Single-Crystalline Silicon-Germanium

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Growth of 2 inch Si0.5Ge0.5bulk single crystals

Cited by 13 publications

References 29 publications

Contactless processing of SiGe-melts in EML under reduced gravity

Contactless processing of SiGe-melts in EML under reduced gravity

Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy

Temperature Dependence of Raman Peak Shift in Single-Crystalline Silicon-Germanium

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Growth of 2 inch Si_0.5Ge_0.5bulk single crystals