Growth of a-Si:H on transparent conductive oxides for solar cell applications

Wanka, H.N.; Schubert, M.B.; Lotter, E.

doi:10.1016/0927-0248(95)00141-7

Cited by 19 publications

(7 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The H 2 /Ar annealing conditions (no plasma) were 1 atmosphere of forming gas (2% H 2 ) at 200, 300, and 400°C for 30 minutes. Some samples were also annealed in 1 atmosphere of air or Ar at 300°C for 30…”

Section: Experimental Techniquesmentioning

confidence: 99%

“…It has been reported that degradation can be minimized or even eliminated by using low substrate temperatures [29,30], faster a-Si growth rates [30], or by covering the SnO 2 with a thin protective layer of sputtered ZnO [30,31,32]. The ZnO properties are relatively inert to reduction in H 2 plasma [29,30] although the H 2 penetrates several hundred Angstroms into the ZnO [30,33,34] and increases its bandgap [33,35]. However, there are conflicting reports saying that ZnO is also reduced by the plasma [35] or that it fails to protect the underlying SnO 2 layer [36,37].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices: Final Report, 24 August 1998-23 October 2001

Birkmire¹,

Phillips²,

Shafarman³

et al. 2003

View full text Add to dashboard Cite

The overall mission of the Institute of Energy Conversion is the development of thin film photovoltaic cells, modules, and related manufacturing technology and the education of students and professionals in photovoltaic technology. The objectives of this 20 month NREL subcontract are to advance the state of the art and the acceptance of thin film PV modules in the areas of improved technology for thin film deposition, device fabrication, and material and device characterization and modeling, relating to solar cells based on CuInSe 2 and its alloys, on a-Si and its alloys, and on CdTe. CuInSe 2 -BASED SOLAR CELLS Effect of Deposition Temperature on Cu(InGa)Se 2 Films and DevicesLowering the Cu(InGa)Se 2 substrate temperature from 550 -600°C, used for the highest efficiency devices can reduce processing costs associated with glass handling and thermal stress on the deposition system, and potentially enable polyimide substrates to be used. The effects of substrate temperature and evaporation sequence, with regard to Cu-rich film growth on Cu(InGa)Se 2 , films and devices and to quantitatively determine the effect of grain size. Cu(InGa)Se 2 films were deposited by elemental evaporation of Cu, In, Ga, and Se using three flux versus time profiles to give depositions with: (1) Cu-rich flux, Cu/(In+Ga) > 1, at the start of the run, (2) Cu-rich flux in the middle of the run, and (3) uniform fluxes so that the films composition is never Cu-rich. The final composition of all devices was the same at the completion of the deposition. These depositions were each done with substrate temperatures (T SS ) = 400, 480, and 550°C. The grain size distribution and surface morphology of each Cu(InGa)Se 2 film was determined using atomic force microscopy and compared to the device behavior. PUBLICATIONSAs a result of research performed under this subcontract reporting period, IEC published 34 papers, as shown in Appendix 1. ORGANIZATION OF THE REPORTThis report is organized into three technical sections: CuInSe 2 -based solar cells, Si-based solar cells, and CdTe-based solar cells. Each section describes the progress made at IEC in addressing the critical issues discussed above during the period of this subcontract.

show abstract

Section: Experimental Techniquesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices: Final Report, 24 August 1998-23 October 2001

Birkmire¹,

Phillips²,

Shafarman³

et al. 2003

View full text Add to dashboard Cite

show abstract

“…The deposition of this material is well known due to its use in Low E coatings. However, it is susceptible to degradation from the hydrogen plasma used in the production of amorphous silicon and tandem silicon cells [8]. This in turn leads to reduced cell efficiency due to the poorer interface between the FTO and the silicon absorber, along with much reduced light transmission [9].…”

Section: Introductionmentioning

confidence: 99%

APCVD of dual layer transparent conductive oxides for photovoltaic applications

et al. 2015

View full text Add to dashboard Cite

We report the atmospheric pressure chemical vapour deposition ( The bulk of the coating was FTO, providing the majority of conductivity and the large surface features associated with this material, whilst keeping the overall cost low by utilising the very fast growth rates achievable. The FTO was capped with a thinner FZO layer to provide a top surface suitable for wet chemical or plasma etching, allowing the surface morphology to be tuned for specific applications.

show abstract

“…The SnO 2 is chemically reduced, leaving a thin but highly absorbing Sn-rich layer [12,13,14]. It has been reported that degradation can be minimized or even eliminated by using low substrate temperatures [14,15], at faster a-Si growth rates [15], or by covering the SnO 2 with a thin protective sputtered ZnO:Al layer [16,17,18]. The ZnO properties are relatively inert to H 2 plasma damage [14,15] although the H 2 penetrates several hundred Angstroms into the ZnO [15,19] and increases its bandgap (8).…”

Section: Effect Of H 2 Plasma and C-si Deposition On Sno 2 And Zno/snmentioning

confidence: 99%

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices Including Concepts for The Development of Polycrystalline Multijunctions: Annual Report; 24 August 1998-23 August 1999

Birkmire¹,

Phillips²,

Shafarman³

et al. 2000

View full text Add to dashboard Cite

SUMMARYThe overall mission of the Institute of Energy Conversion is the development of thin film photovoltaic cells, modules, and related manufacturing technology and the education of students and professionals in photovoltaic technology. The objectives of this 12 month NREL subcontract are to advance the state of the art and the acceptance of thin film PV solar cells in the areas of improved technology for thin film deposition, device fabrication, and material and device characterization and modeling, relating to solar cells based on CuInSe 2 and its alloys, on a-Si and its alloys, and on CdTe. CuInSe 2 -BASED SOLAR CELLS CIS-based Solar Cells with Improved ManufacturabilityFor solar cells based on thin film Cu(InGa)Se 2 to become a commercially viable technology, manufacturing costs must be reduced. One means to accomplish this is by reducing the substrate temperature at which the Cu(InGa)Se 2 layer is deposited This report addresses material and device issues related to reducing T ss from 550ûC to 400ûC for the deposition of Cu(InGa)Se 2 by physical vapor deposition using multisource elemental evaporation. The CuInGaSe 2 deposition sequence was varied to determine the effect of a Curich growth step, i.e., deposition with the Cu molar flux greater than the sum of the In and Ga fluxes. The connection between grain size, morphology, compositional uniformity, and device performance, as they are affected by substrate temperature and growth process, was investigated. The objective was to develop a process for improved device performance with T ss = 400ûC.Device results with T ss = 400ûC show that a Cu-rich growth step during the Cu(InGa)Se 2 deposition is needed for improved device performance. However, the film and device results are the same whether the Cu-rich growth occurs during the initial nucleation or later in the process. This indicates tolerance to different process sequences, which allows flexibility in deposition process design.Films grown at 550ûC have larger grains and give better performance than films deposited at 400ûC. But, with a given substrate temperature there is no simple correlation between grain size and device performance. At the lower temperature the improved cell results with Cu-rich growth cannot be explained by increased lateral grain size at the surface. Conversely, at the higher temperature, the increased grain size with the Cu-rich growth does not provide improved device performance.At T ss = 550ûC, the device performance is insensitive to the use of Cu-rich growth. A simple process with constant fluxes throughout the deposition gives as high a device efficiency as processes incorporating graded fluxes to give Cu-rich growth. At 400ûC, the uniform process gives more columnar grains but the same lateral grain size as the graded, Cu-rich processes. However, the best devices result from Cu-rich growth although not necessarily during the initial film nucleation.ii In-line Evaporation of Cu(InGa)Se 2In-line evaporation is a potentially effective means to achieve the high rate uniform dep...

show abstract

Growth of a-Si:H on transparent conductive oxides for solar cell applications

Cited by 19 publications

References 7 publications

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices: Final Report, 24 August 1998-23 October 2001

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices: Final Report, 24 August 1998-23 October 2001

APCVD of dual layer transparent conductive oxides for photovoltaic applications

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices Including Concepts for The Development of Polycrystalline Multijunctions: Annual Report; 24 August 1998-23 August 1999

Contact Info

Product

Resources

About