Growth of 3″ and 4″ gallium arsenide crystals by the vertical gradient freeze (VGF) method

Investigation of residual dislocations in VGF-grown Si-doped GaAs

“…The applied furnace types were described in detail in previous papers [4,[16][17]. The crystals had diameters of 3 and 4 inch, respectively, and were grown in pBNcrucibles using full encapsulation with boric oxide.…”

Radial segregation in VGF-RMF grown germanium

“…Hence, it is the result of the complex, mutual interaction of the velocity, concentration, and temperature fields in the melt during growth including the balance of heat and mass at the interface. In typical VGF growth, a curved interface with a concave shape as seen from the melt occurs [4][5][6], and the buoyancy due to the radial temperature gradient drives a natural flow parallel to the interface towards the centre of the melt. In [7,8] the effect of such a radially converging melt motion on the radial segregation has been studied theoretically on the basis of an analytical approach.…”

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

“…The close collaboration between CGL and FCM on the further improvement of VGF growth of GaAs continued until 2003 with a large series of publications . The transfer of this VGF technology to FCM was very successful.…”