Investigation of residual dislocations in VGF-grown Si-doped GaAs

Birkmann, B.; Stenzenberger, J.; Jurisch, M.; Härtwig, J.; Alex, V.; Müller, G.

doi:10.1016/j.jcrysgro.2004.11.400

Cited by 13 publications

(16 citation statements)

References 29 publications

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“…As was observed by Birkmann et al [60] in such (100)-oriented VGF wafers the residual dislocations are accumulated cross-like along the <100> directions. Furthermore, they no longer lie within the main <110>{111} glide system, as is characteristic for GaAs crystals with higher EPD.…”

Section: Dislocationssupporting

confidence: 61%

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Thermodynamics, Origin, and Control of Defects

Rudolph

2008

Crystal Growth Technology

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Section: Dislocationssupporting

confidence: 61%

“…Instead of the typical stress-induced 60 • dislocations other dislocation types dominate. Within the cross they belong to the (010)1/2 [101] system [60,61]. There arise two important questions having not yet complete answers up to now.…”

Section: Dislocationsmentioning

confidence: 99%

Thermodynamics, Origin, and Control of Defects

Rudolph

2008

Crystal Growth Technology

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“…Usually, in VGF-grown Si-doped GaAs crystals, several types of dislocations resulting from thermal stress and/or lattice mismatch during growth process have been identified in the previous works [2,[29][30][31][32][33]. Birkmann et al [2] pointed out that the 60°dislocations belonging to the f111g 1 2 \110 [ glide systems were the most common dislocations in materials with zinc-blende structure. We suggest that the effects of pressure-induced lattice-mismatched factor and microhardness anisotropy in the present n-type GaAs:Si semiconductor may have triggered the dislocation activities to cause the discontinuous drop observed here.…”

Section: Methodsmentioning

confidence: 99%

“…Since the covalent atomic radius of Si [1.11 (2) Å ] is smaller than that of Ga [1.22 (3) Å ] and As [1.19 (4) Å ] [2], it has been well established that Si tends to occupy Ga site as the dopant. Consequently, the GaAs:Si crystals grown by both the Czochralski and Bridgman techniques usually resulted in n-type GaAs [3,4].…”

Section: Introductionmentioning

confidence: 99%

Structural properties of pressure-induced structural phase transition of Si-doped GaAs by angular-dispersive X-ray diffraction

Lin

et al. 2016

Appl. Phys. A

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Pressure-induced phase transitions in n-type silicon-doped gallium arsenide (GaAs:Si) at ambient temperature were investigated by using angular-dispersive X-ray diffraction (ADXRD) under high pressure up to around 18.6 (1) GPa, with a 4:1 (in volume ratio) methanol-ethanol mixture as the pressure-transmitting medium. In situ ADXRD measurements revealed that n-type GaAs:Si starts to transform from zinc-blende structure to an orthorhombic structure [GaAs-II phase], space group Pmm2, at 16.4 (1) GPa. In contrast to previous studies of pure GaAs under pressure, our results show no evidence of structural transition to Fmmm or Cmcm phase. The fitting of volume compression data to the third-order BirchMurnaghan equation of state yielded that the zero-pressure isothermal bulk moduli and the first-pressure derivatives were 75 (3) GPa and 6.4 (9) for the B3 phase, respectively. After decompressing to the ambient pressure, the GaAs:Si appears to revert to the B3 phase completely. By fitting to the empirical relations, the Knoop microhardness numbers are between H PK = 6.21 and H A = 5.85, respectively, which are substantially smaller than the values of 7-7.5 for pure GaAs reported previously. A discontinuous drop in the pressure-dependent lattice parameter, N-N distances, and V/V 0 was observed at a pressure of 11.5 (1) GPa, which was tentatively attributed to the pressure-induced dislocation activities in the crystal grown by vertical gradient freeze method.

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“…In most cases, these dislocations are arranged in the form of a cross-like arrangement, and the origin of their formation is still under debate [5,6]. Their formation is all the more enigmatic as dislocation lines and Burgers vectors are not arranged on conventional glide planes.…”

Section: Introductionmentioning

confidence: 99%