Growth of (101) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE

Koide

Honda

et al. 2006

Using a selective metal organic vapour phase epitaxy method, (1-101)GaN was grown on a (001)Si substrate. Intentional carbon doping was attempted using CCl 4 as the souce gas and the electrical properties were studied as a function of the doping level. All samples showed the p-type conduction. The hole concentration was increased by the doping, determined by the ratio of the carbon source and NH 3 flow rates. The results indecated that the p-type conduction is due to the incorporation of carbon in the (1-101)GaN.

Section: Introductionmentioning

confidence: 75%

p‐type conduction in a C‐doped (1‐101)GaN grown on a 7‐degree‐off oriented (001)Si substrate by selective MOVPE

Koide

Honda

et al. 2006

“…We have been attempting the selective MOVPE growth (SAG) of semi-polar (1-101)GaN on a silicon substrate [4]. To do this, a (111)Si facet was formed on a off oriented (001)Si substrate by anisotropy etching in a KOH solution, and the GaN was grown on the (111) surface selectively.…”

mentioning

confidence: 99%

Growth of semi‐polar (11‐22)GaN on a (113)Si substrate by selective MOVPE

Tanikawa

Honda

et al. 2008

MOVPE growth of uniform (11‐22)GaN layer was attempted on a patterned (113)Si substrate. The growth of GaN was achieved on (1‐11) facets of the Si selectively. The optimum design of the patterned substrate and the growth conditions were studied to get the semi‐polar GaN layer with high optical and crystalline quality. The cathode‐luminescence spectra showed a sharp edge emission peak of which half width was as narrow as 10 meV. The X‐ray rocking curves showed that the (11‐22) diffraction was as narrow as 300 arcsec. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

“…On the Si substrate, we first made stripe windows of 2 µm wide. And by adopting anisotropy etching in a KOH solution, we got a groove made of (111) facets of the Si [6,9]. On the (111) facet, the SAG of GaN was performed to get a trape-www.pss-c.com zoid of which top face was of (1-101) facet.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…The GaN stripe structure might be used as an optical cavity/waveguide as it is to open a new possibility of integrated opto-electronics on a silicon substrate. In our previous papers, we proposed the growth of of a (1-101) GaN trapezoid on a 7-degree off oriented (001) silicon substrate [6,7]. The GaN/AlGaN or InGaN/GaN heterostructure made on the (1-101) GaN might be superior to the conventional one grown on a (0001) GaN because of the possible reduction of the piezoelectric field, which will enhance the radiative recombination intensity in quantum wells.…”

mentioning

confidence: 99%

Optical spectra of (1‐101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate

Kim

Narita

et al. 2006

Self Cite

PACS 78. 45.+h, 78.55.Cr, 78.67.De, 81.15.Gh InGaN/GaN and GaN/AlGaN MQW waveguides were fabricated on a (1-101) GaN facet grown on a 7-degree off oriented (001) Si substrates by MOVPE. We achieved uniform layers with less dislocation density and superior flatness by virtue of the low growth rate on the facet. Using a nitrogen laser as the excitation source, the optical gain spectra as a waveguide was evaluated. In the InGaN/GaN MQW structure, we found that the optical gain was as high as +40cm -1 at near band edge emission peak. The GaN edge emission peak showed narrowing by high intensity excitation: the full width at half-maximum 1.8 nm at under 4.5 MW/cm 2 at 77 K.