Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy

Abstract

We have grown bulk GaAsN and InGaAsN quantum well laser structures using molecular beam epitaxy and an electron cyclotron resonance plasma source with N2 gas. X-ray diffraction measurements in GaAsN grown on GaAs were used to determine the concentration of N in the range of 0% to ∼2%. Room temperature photoluminescence (PL) measurements were done on quantum well test structures and half lasers. The PL intensity decreases and the PL full width at half maximum (FWHM) increases as the wavelength increases. Rapid thermal annealing (RTA) at 850 °C for 10 s improves the PL intensity by a factor of 8 and increases the PL peak emission energy by 80 meV. The longest wavelength measured to date in laser structures with single quantum wells of InGaAsN is 1480 nm with a FWHM of 60 meV. Samples with and without RTA were fabricated into broad-area lasers with dimensions of 50×500 μm2. Laser devices with RTA operated in the pulsed mode at 1.3 μm with a threshold current density of 9.5 kA/cm2.

Anomalous temperature-dependent photoluminescence characteristic of as-grown GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy

“…In addition, with N developing tensile strain, and In developing compressive strain, the lattice constant of GaInNAs can be tuned to achieve either lattice matching or high In composition condition on the GaAs substrate. These properties allow many attractive long-wavelength telecommunication devices, such as laser [4][5][6][7][8][9][10][11][12][13], particularly VCSEL [14,15], avalanche photodiodes [16] and resonant-cavity-enhanced p-i-n photodetector [17] to be built on the cheaper and more robust GaAs substrate.…”

Post-growth thermal annealing of high N-content GaAsN by MOVPE and its effect on strain relaxation

“…This may be due to comparatively to the lower growth temperature commonly used for the III-V nitrides, compared to that for GaAs. Post-growth thermal annealing can improve the luminescence properties significantly, but leads to a blue shift of the photoluminescence (PL) peak energy [7][8][9]. The structural origin of the effects of post-growth annealing treatments has been an issue.…”

Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy

“…One of the key issues of these III-III-V-N type alloys is the compositional fluctuation in the microscopic scale, that may be responsible for some anomalous optical properties. In the InGaAsN alloy, it is known that the optical properties can be greatly improved by the rapid thermal annealing (RTA) at temperature higher than the growth temperature [5][6][7]. In this work, we have studied the RTA effect on the optical properties of InGaPN alloy layers grown on GaP (0 0 1) substrates by metalorganic vapor phase epitaxy (MOVPE), aiming to demonstrate the RTAinduced improvement in the InGaPN film quality in connection with the compositional fluctuation.…”