Growth of (1 0 0), (0 1 0) and (0 0 1) β-Ga2O3 single crystals by vertical Bridgman method

Laser CVD Growth of Uniquely <010>‐oriented β‐Ga2O3 Films on Quartz Substrate with Ultrafast Photoelectric Response

“…In common case, {100} plane of β-Ga 2 O 3 , rather than {010} plane, has the lowest surface energy. [34,45] The <010> orientation appeared when the oxygen flow rate matched up to 200 sccm with the ratio of O to Ga being equal to 2, and the <112-> orientation appeared when the oxygen flow rate amounted to 500 sccm with the O/Ga ratio of 5. The ratio of O to Ga considerably exceeded 1.5, which meant that the special out-of-plane orientations were associated with excess oxygen atmospheres in the LCVD processes using Ga(acac) 3 and O 2 as precursors.…”

Optical and electrical properties of Sb-doped β-Ga2O3 crystals grown by OFZ method

“…Properties of the β-Ga 2 O 3 single crystal such as its huge bandgap (4.8 eV) [4] , high-breakdown electric field (8 MV/cm) [5] , and short absorption edge [6] make them appropriate materials for deep ultraviolet (UV) electronic devices and high power, high voltage, and low loss power devices [7][8][9][10][11][12][13] . In particular, β-Ga 2 O 3 single crystals can be obtained by the melt method, which includes the edge-defined film-fed growth [14] , optical floating zone (OFZ) [15] , Czochralski [16] , and vertical Bridgman [17] methods. Therefore, larger-size β-Ga 2 O 3 single crystals can be obtained at a smaller cost than that of SiC and GaN crystals, which is beneficial for its large-scale applications.…”

The origin of twins in the growth of the (100) plane of a β-Ga2O3 crystal using EFG

“…β-Ga 2 O 3 crystals can be grown by melt methods, such as the floating zone (FZ), 18–20 Czochralski (CZ), 21–24 vertical Bridgman (VB), 25–27 and edge-defined film-fed growth (EFG) methods. 4,28,29 This results in a lower wafer cost compared to SiC and GaN.…”

“…[4][5][6][7] These good qualities allow β-Ga 2 O 3 crystals to be used in semiconductor lasers, 8 high-temperature gas sensors, 9 deep UV detectors, 10 scintillation detectors, 11 field effect transistors, 12,13 Schottky barrier diodes, [14][15][16] and transparent conductive electrodes. 17 β-Ga 2 O 3 crystals can be grown by melt methods, such as the floating zone (FZ), [18][19][20] Czochralski (CZ), [21][22][23][24] vertical Bridgman (VB), [25][26][27] and edge-defined film-fed growth (EFG) methods. 4,28,29 This results in a lower wafer cost compared to SiC and GaN.…”