Growth mode transition and relaxation of thin InGaN layers on GaN (0001)

Pristovsek, Markus; Kadir, Abdul; Meißner, Christian; Schwaner, Tilman; Leyer, Martin; Stellmach, Joachim; Kneissl, Michael; Ivaldi, F.; Kret, S.

doi:10.1016/j.jcrysgro.2013.03.012

Cited by 21 publications

(18 citation statements)

References 38 publications

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“…The average layer thickness and the indium incorporation as a function of growth temperatures were investigated by analyzing o/2y X-ray scan from (0002) reflections. Since the position of the InGaN peak relative to GaN peak in X-ray spectra depends on indium content as well as on the strain in InGaN layer, the strain was independently extracted from reciprocal space map (RSM) from an asymmetric reflection (10)(11)(12)(13)(14)(15). It should be noted that diffracted intensity around (10-15) reflection from InGaN layer was very poor, and hence recoding the RSM was not easy for thin InGaN layers.…”

Section: Growth Of Ingan Qdsmentioning

confidence: 99%

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Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy

Kadir¹,

Meißner²,

Schwaner³

et al. 2011

Journal of Crystal Growth

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Section: Growth Of Ingan Qdsmentioning

confidence: 99%

“…However, the thermodynamics leading to the formation of such 2D island like structure for InGaN is still not fully understood. From the in-situ ellipsometric data we intend to report that this morphology forms only after the metalorganic flow is stopped, which will be discussed elsewhere [12].…”

Section: Growth Of Ingan Qdsmentioning

confidence: 99%

Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy

Kadir¹,

Meißner²,

Schwaner³

et al. 2011

Journal of Crystal Growth

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“…While in some applications, the former can be desired, the latter induces low quality layers with a high dislocation density, particularly on hetero-interfaces [14,15]. Zhao et al [37] and Pristovsek et al [38] described theoretically and experimentally the InGaN growth with metal-organic vapor phase epitaxy (MOVPE) on a GaN buffer layer having a [0001] growth direction. Their attention was focused on In content and the growth process parameters' influence on the critical thicknesses for two relaxation mechanisms, in order to establish what occurs in each heterostructure.…”

Section: Physical Parameters Gan Inn Bowing Parametersmentioning

confidence: 99%

Modeling of the Interminiband Absorption Coefficient in InGaN Quantum Dot Superlattices

2016

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Abstract:In this paper, a model to estimate minibands and theinterminiband absorption coefficient for a wurtzite (WZ) indium gallium nitride (InGaN) self-assembled quantum dot superlattice (QDSL) is developed. It considers a simplified cuboid shape for quantum dots (QDs). The semi-analytical investigation starts from evaluation through the three-dimensional (3D) finite element method (FEM) simulations of crystal mechanical deformation derived from heterostructure lattice mismatch under spontaneous and piezoelectric polarization effects. From these results, mean values in QDs and barrier regions of charge carriers' electric potentials and effective masses for the conduction band (CB) and three valence sub-bands for each direction are evaluated. For the minibands' investigation, the single-particle time-independent Schrödinger equation in effective mass approximation is decoupled in three directions and resolved using the one-dimensional (1D) Kronig-Penney model. The built-in electric field is also considered along the polar axis direction, obtaining Wannier-Stark ladders. Then, theinterminiband absorption coefficient in thermal equilibrium for transverse electric (TE) and magnetic (TM) incident light polarization is calculated using Fermi's golden rule implementation based on a numerical integration into the first Brillouin zone. For more detailed results, an absorption coefficient component related to superlattice free excitons is also introduced. Finally, some simulation results, observations and comments are given.

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“…19 Thus E crit might be related to the formation of dislocations at or very close to the surface, breaking just a single bond. 8 Moreover, the critical thickness in Fig. 1 is valid only for a single QW.…”

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confidence: 99%

“…However a higher indium content in the quantum wells (QWs) results in an earlier transition to three dimensional growth and then relaxation. [1][2][3][4][5][6][7][8] InN on GaN relaxes after 1.1 ML of deposited material, 4 and islanding starts even before. 9 Therefore, for very high indium contents the QWs need to be very thin.…”

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Wavelength limits for InGaN quantum wells on GaN

Pristovsek

2013

Applied Physics Letters

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The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600 nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

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Growth mode transition and relaxation of thin InGaN layers on GaN (0001)

Cited by 21 publications

References 38 publications

Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy

Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy

Modeling of the Interminiband Absorption Coefficient in InGaN Quantum Dot Superlattices

Wavelength limits for InGaN quantum wells on GaN

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