Growth mode and strain effect on relaxor ferroelectric domains in epitaxial 0.67Pb(Mg1/3Nb2/3)O3–0.33PbTiO3/SrRuO3 heterostructures

Belhadi, Jamal; Gabor, Urška; Daneu, Nina; Kim, Jieun; Tian, Zishen; Koster, Gertjan; Martin, Lane W.; Spreitzer, Matjaž

doi:10.1039/d0ra10107a

Cited by 7 publications

(5 citation statements)

References 47 publications

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“…This change can also be explained by the variation in domain shape due to large distortion in the tetragonal structure under strain. Belhadi et al found that the PMN-PT domain structure modifies to a disc-like shape from its fundamental butterfly-shaped pattern under high biaxial strain [43]. These results confirm the elastic interaction between the biferroic layers.…”

Section: Resultsmentioning

confidence: 72%

Unravelling the magnetodielectric characteristics of strain-coupled PMN-PT/FSMA multiferroic heterojunction toward flexible MEMS applications

Arora¹,

Kumar²,

KAUSHALENDRA³

et al. 2022

J. Phys. D: Appl. Phys.

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Flexible microelectromechanical (MEMS) devices are poised to scaffold technological innovations in the fields of wearable sensors, implantable health monitoring systems and touchless human-machine interaction. Here, we report the magnetoelectric properties of cost-effective and room-temperature sensitive 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3/Ni50Mn35In15 (PMN-PT/FSMA) multiferroic heterostructure integrated on flexible stainless steel substrate via RF/DC magnetron sputtering technique. The growth of the pure perovskite phase of PMN-PT without any pyrochlore impurity is confirmed by the dominant (002) orientation of the tetragonal PMN-PT. The double logarithmic plot of current density with electric field validates an Ohmic conduction mechanism with low leakage current density of ~10-6 A/cm2. The anomaly observed in temperature-dependent dielectric and ferroelectric characteristics of the heterostructure overlap with the martensite transformation regime of the bottom Ni-Mn-In (FSMA) layer. The PMN-PT/Ni-Mn-In multiferroic heterostructure exhibits a significant magnetodielectric effect of ~3% at 500 Oe and can be used as an ultra-sensitive room-temperature magnetic field sensor. These results have been explained by an analytical model based on strain-mediated magnetoelectric coupling between interfacially coupled PMN-PT and Ni-Mn-In layers of the multiferroic heterostructure. Furthermore, the excellent retention of magnetodielectric response up to 200 bending cycles enhances its applicability towards flexible MEMS devices. Such PMN-PT based multiferroic heterostructures grown over the flexible substrate can be a potential candidate for piezo MEMS applications.

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Section: Resultsmentioning

confidence: 72%

Unravelling the magnetodielectric characteristics of strain-coupled PMN-PT/FSMA multiferroic heterojunction toward flexible MEMS applications

Arora¹,

Kumar²,

KAUSHALENDRA³

et al. 2022

J. Phys. D: Appl. Phys.

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“…1) is indicative of the high quality and epitaxial PMN-33PT/SRO heterostructures. 7 The rocking curves obtained on the (002) peak of SRO and PMN-33PT layers [Fig. 1(b)] reveal narrow full width-at-half maximum (FWHM) values of 0.04 <Dx < 0.06 , indicating very low mosaicity and confirming the excellent crystalline quality of the PMN-33PT/SRO heterostructures.…”

mentioning

confidence: 76%

“…6 In thin films, the substrate and the growth mode have a huge effect on the structural characteristics and functional properties of the PMN-PT material. [7][8][9][10] For instance, the piezoelectric coefficients in thin films are an order of magnitude lower relative to bulk PMN-PT single crystals due to substrate clamping. 10 PMN-PT thin films demonstrate slimmer ferroelectric polarization-electric field (P-E) hysteresis loops with low remanent polarization compared to the bulk material, which is beneficial, for instance, for energy storage applications.…”

mentioning

confidence: 99%

“…Details about the PLD growth conditions of SRO and PMN-33PT can be found elsewhere. 7 The used SSO and DSO substrates provide different lattice mismatch with PMN-33PT, which could be calculated using the relation f ¼ (a s Àa f )/a s , where a s and a f are the lattice parameters of the substrate and the unstrained film, respectively. The obtained lattice mismatch is relatively small for PMN-33PT/SSO ( f $ À0.7%), while for PMN-33PT/DSO, it is quite large ( f $ À1.9%).…”

mentioning

confidence: 99%

“…Interestingly, despite the increased thickness of the studied PMN-33PT films ($500 nm), the obtained Dx values are as low as the values obtained, in general, on fully strained epitaxial thin films with a thickness of <100 nm. 7,14 Such quality of the PMN-33PT films is achieved by using coherent and smooth SRO buffer layer grown on high quality single terminated substrates [see Fig. S2(a) in the supplementary material] and by carefully adjusting the PLD growth parameters.…”

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confidence: 99%

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Large imprint in epitaxial 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 thin films for piezoelectric energy harvesting applications

Belhadi

Hanani

Trstenjak

et al. 2022

Applied Physics Letters

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Tuning and stabilizing a large imprint in epitaxial relaxor ferroelectric thin films is one of the key factors for designing micro-electromechanical devices with an enhanced figure of merit (FOM). In this work, epitaxial 500 nm-thick 0.67Pb(Mg1/3Nb2/3)O3–0.33PbTiO3 (PMN–33PT) films, free from secondary phases and with extremely low rocking curves (FWHM < 0.05°), are grown on ScSmO3 (SSO) and DyScO3 (DSO) substrates buffered with SrRuO3 (SRO). The PMN–33PT is observed to grow coherently on SSO substrates (lattice mismatch of −0.7%), which is c-axis oriented and exhibits large tetragonality compared to bulk PMN–33PT, while on DSO substrates (lattice mismatch of −1.9%), the PMN–33PT film is almost completely relaxed and shows reduced tetragonality. Due to the compressive epitaxial strain, the fully strained PMN–33PT film displays typical ferroelectric P–E hysteresis loops, while the relaxed sample shows relaxor-like P–E loops. Samples present large negative imprints of about −88.50 and −49.25 kV/cm for PMN–33PT/SRO/SSO and PMN–33PT/SRO/DSO, respectively, which is more than threefold higher than the coercive field. The imprint is induced by the alignment of defect dipoles with the polarization and is tuned by the epitaxial strain. It permits the stabilization of a robust positive polarization state (Pr ∼ 20 μC/cm2) and low dielectric permittivity (<700). In addition, the relaxed PMN–33PT film shows improved piezoelectric properties, with a 33% enhancement in d33,eff relative to the fully strained sample. The obtained low dielectric permittivity and the high piezoelectric coefficients at zero electric field in the studied PMN–33PT films hold great promise to maximize the FOM toward applications in piezoelectric devices.

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Observation of dielectric resonance and negative capacitance in 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 textured thin films

et al. 2023

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Growth mode and strain effect on relaxor ferroelectric domains in epitaxial 0.67Pb(Mg_1/3Nb_2/3)O₃–0.33PbTiO₃/SrRuO₃ heterostructures

Abstract: Strain engineering in epitaxial PMN–33PT films revealed an evolution from a butterfly-shaped diffraction for mildly strained films, evidencing the stabilization of relaxor domains, to disc-shaped diffraction patterns for high compressive strains.

Cited by 7 publications

References 47 publications

Unravelling the magnetodielectric characteristics of strain-coupled PMN-PT/FSMA multiferroic heterojunction toward flexible MEMS applications

Unravelling the magnetodielectric characteristics of strain-coupled PMN-PT/FSMA multiferroic heterojunction toward flexible MEMS applications

Large imprint in epitaxial 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 thin films for piezoelectric energy harvesting applications

Observation of dielectric resonance and negative capacitance in 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 textured thin films

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