Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

Portail, Marc; Michon, A.; Vézian, S.; Lefebvre, Denis; Chénot, Stéphane; Roudon, E.; Zieliński, Marcin; Chassagne, Thierry; Tiberj, Antoine; Camassel, Jean; Cordier, Y.

doi:10.1016/j.jcrysgro.2012.04.004

Cited by 27 publications

(23 citation statements)

References 36 publications

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“…Graphene/3C-SiC/Si [14,16,34,35] Thermal decomposition of 3C-SiC on Si in UHV >0.4 1600 ± 10 2715 ± 5 60 ± 10 100 ± 10 surface. The TEM image also shows an atomic sheet resting above this ~20 nm thick amorphous layer, underneath the protective layer.…”

Section: Transmission Electron Microscopy (Tem) and Low Energy Electrmentioning

confidence: 99%

Solid source growth of graphene with Ni–Cu catalysts: towards high qualityin situgraphene on silicon

Mishra

Boeckl

Tadich

et al. 2017

J. Phys. D: Appl. Phys.

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We obtain a monolayer graphene on epitaxial silicon carbide on silicon substrates via solid source growth mediated by a thin Ni-Cu alloy. Raman spectroscopy consistently shows an I D /I G band ratio as low as ~0.2, indicating that the graphene obtained through this method is to-date the best quality monolayer grown on epitaxial silicon carbide films on silicon. We describe the key steps behind the graphene synthesis on the basis of extensive physical, chemical and morphological analyses. We conclude that (1) the oxidation, amorphisation and silicidation of the silicon carbide surface mediated by the Ni, (2) the liquid-phase epitaxial growth of graphene as well as (3) the self-limiting graphitization provided the molten Cu catalyst, are key characteristics of this novel synthesis method.

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Section: Transmission Electron Microscopy (Tem) and Low Energy Electrmentioning

confidence: 99%

Solid source growth of graphene with Ni–Cu catalysts: towards high qualityin situgraphene on silicon

Mishra

Boeckl

Tadich

et al. 2017

J. Phys. D: Appl. Phys.

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“…More detailed study of the growth modes of graphene synthesized by argonpropane assisted CVD on 3C-SiC/Si and 6H-SiC can be found in Ref. [134]. Similarly to Hwang's report [135], these authors investigate how the graphitic phase covers the SiC surface depending on the CVD process duration.…”

Section: Growth Of Graphene On Sic Using External Sourcesmentioning

confidence: 96%

“…The most widely studied among the carbon sources is propane [114,121,124,126,[128][129][130][131][132][133][134][135][136][137]. There is only a few works devoted to ethene [125], toluene [127] and xylene [127] as carbon sources for graphene growth on silicon carbide.…”

Section: Growth Of Graphene On Sic Using External Sourcesmentioning

confidence: 99%

Combining graphene with silicon carbide: synthesis and properties – a review

Shtepliuk

Khranovskyy

Yakimova

2016

Semicond. Sci. Technol.

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Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that would enable unique applications. Integration of graphene with inorganic semiconductors, e.g. SiC promotes the birth of a class of hybrid materials which are highly promising for development of novel operations, since they combine the best properties of two counterparts in the frame of one hybrid platform. As a specific heterostructure, graphene on SiC performs strongly dependent on the synthesis method and the growth modes.In this paper a comprehensive review of the most relevant studies of graphene growth methods and mechanisms on SiC substrates has been carried out. The aim is to elucidate the basic physical processes that are responsible for the formation of graphene on SiC.First, an introduction is made covering some intriguing and not so often discussed properties of graphene. Then, we focus on integration of graphene with SiC which is facilitated by the nature of SiC to assume graphitization. As concerning the synthesis methods we discuss thermal decomposition of SiC, chemical vapor deposition and molecular beam epitaxy stressing that the first technique is the most common one when SiC substrates are used. In addition, we briefly appraise graphene synthesis via metal mediated carbon segregation.We address in detail the main aspects of the substrate effect such as substrate face polarity, offcut, kind of polytype and nonpolar surfaces on the growth of graphene layers. A comparison of graphene grown on the polar faces is made. In particular, growth of graphene on Si-face SiC is critically analyzed concerning growth kinetics and growth mechanisms taking into account the specific characteristics of SiC (0001) surfaces, such as the step-terrace structure and the unavoidable surface reconstruction upon heating. In all subtopics obstacles and solutions are featured. We complete the review with a short summary and concluding remarks. Outline

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“…Then, a number of works demonstrating the feasibility of graphene synthesis on β-SiC/Si wafers of different orientations have been published . Mostly, these studies have been conducted on β-SiC (111) thin films [51][52][53][54][55][56][57][58][59][60][61][65][66][67][68][69][70][71][72][73][74][75][76][77][78][79][80][81] and single-crystalline SiC (111) wafers [62][63][64]. However, some studies have been carried out on β-SiC(001) [50, 61, 82-93, 101, 102] and even on polycrystalline β-SiC substrates [94].…”

Section: Introductionmentioning

confidence: 99%

Controllable Synthesis of Few-Layer Graphene on β-SiC(001)

Молодцова¹,

Чайка²,

Aristov³

2019

Silicon Materials

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Few-layer graphene exhibits exceptional properties that are of interest for fundamental research and technological applications. Nanostructured graphene with self-aligned domain boundaries and ripples is one of very promising materials because the boundaries can reflect electrons in a wide range of energies and host spinpolarized electronic states. In this chapter, we discuss the ultra-high vacuum synthesis of few-layer graphene on the technologically relevant semiconducting β-SiC/Si(001) wafers. Recent experimental results demonstrate the possibility of controlling the preferential domain boundary direction and the number of graphene layers in the few-layer graphene synthesized on the β-SiC/Si(001) substrates. Both these goals can be achieved utilizing vicinal silicon wafers with small miscuts from the (001) plane. This development may lead to fabricating new tunable electronic nanostructures made from graphene on β-SiC, opening up opportunities for new applications.

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Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

Cited by 27 publications

References 36 publications

Solid source growth of graphene with Ni–Cu catalysts: towards high qualityin situgraphene on silicon

Solid source growth of graphene with Ni–Cu catalysts: towards high qualityin situgraphene on silicon

Combining graphene with silicon carbide: synthesis and properties – a review

Controllable Synthesis of Few-Layer Graphene on β-SiC(001)

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