Controllable Synthesis of Few-Layer Graphene on β-SiC(001)

Abstract

Few-layer graphene exhibits exceptional properties that are of interest for fundamental research and technological applications. Nanostructured graphene with self-aligned domain boundaries and ripples is one of very promising materials because the boundaries can reflect electrons in a wide range of energies and host spinpolarized electronic states. In this chapter, we discuss the ultra-high vacuum synthesis of few-layer graphene on the technologically relevant semiconducting β-SiC/Si(001) wafers. Recent experimental results demonstrate the possibility of controlling the preferential domain boundary direction and the number of graphene layers in the few-layer graphene synthesized on the β-SiC/Si(001) substrates. Both these goals can be achieved utilizing vicinal silicon wafers with small miscuts from the (001) plane. This development may lead to fabricating new tunable electronic nanostructures made from graphene on β-SiC, opening up opportunities for new applications.

Enhanced Magnetism through Oxygenation of FePc/Ag(110) Monolayer Phases

“…Recently, the spontaneous assembly and the electronic and magnetic properties of FePc have been studied on a variety of substrates: Au(111) [1][2][3] , Au(001) 4 , Au(100) 5 , TiO2(110) 6 , InAs(100) 7 , InSb(100) 7 , Cu(110) 8 , NaCl/Cu(111) 9 , Ag(111) 10,11 , graphite 12 and grahene/Cu(111), Ni(111) 13 . In particular, FePc/Ag(110) has been intensively investigated to shed light into the self-assembly, interaction mechanisms, structural transformations upon thermal treatments, and its capacity to accommodate small molecules like O2.…”