1998
DOI: 10.1557/jmr.1998.0318
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Growth, microstructure, and resistivity of RuO2 thin films grown by metal-organic chemical vapor deposition

Abstract: Polycrystalline RuO 2 thin films were grown by metal-organic chemical vapor deposition (MOCVD) on both SiO 2 ͞Si(001) and Pt͞Ti͞SiO 2 ͞Si(001) substrates. Films having a controllable and reproducible structural texture and phase purity were synthesized by carefully controlling deposition parameters. Moderate growth temperatures (ϳ350 ± C) and low growth rates (,30Å͞min) produced highly (110)-textured RuO 2 films. Highly (101)-textured RuO 2 films were favored at slightly lower temperatures (ϳ300 ± C) and much … Show more

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Cited by 41 publications
(23 citation statements)
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“…The average length and radius of these IrO 2 nanorods were estimated to be (3.5 ± 0.2) lm and (150 ± 50) nm, respectively. Although the driving force behind the formation of these non-conventional, rodshaped crystals is unknown, the generation of (101) oriented nanorods is consistent with the growth kinetics of RuO 2 thin films reported by Vetrone et al [18] These authors argued that the (110) face is the most thermodynamically stable arrangement for metal oxides with a rutile structure, thus deposition of thin films with the (110) orientation are favored under equilibrium conditions such as high deposition temperatures and low growth rates. The (101) ).…”
supporting
confidence: 86%
“…The average length and radius of these IrO 2 nanorods were estimated to be (3.5 ± 0.2) lm and (150 ± 50) nm, respectively. Although the driving force behind the formation of these non-conventional, rodshaped crystals is unknown, the generation of (101) oriented nanorods is consistent with the growth kinetics of RuO 2 thin films reported by Vetrone et al [18] These authors argued that the (110) face is the most thermodynamically stable arrangement for metal oxides with a rutile structure, thus deposition of thin films with the (110) orientation are favored under equilibrium conditions such as high deposition temperatures and low growth rates. The (101) ).…”
supporting
confidence: 86%
“…The latter has been considered as the thermodynamically most stable surface for the RuO 2 rutile structure and should be more favored under conditions employing higher deposition temperatures. [30] On the other hand, formation of this type of (200) oriented, RuO 2 thin film was also reported on MgO, Al 2 O 3 and even LaAlO 3 substrates. This observation has been attributed to the minimization of lattice misfits present between the as-deposited film and substrate.…”
Section: Ruo 2 Depositionmentioning
confidence: 79%
“…CVD is preferred in applications where high conformality of the films is needed. Precursors such as RuCp 2 [2,16,17] (Cp = cyclopentadienyl), Ru(acac) 3 [17,18] (acac = acetylacetonate), Ru-(thd) 3 [19] (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate), Ru(hfb)(CO) 4 [20] (hfb = hexafluoro-2-butyne), and Ru 3 -(CO) 12 [17] are, for example, available for the CVD of ruthenium thin films. However, these precursors are not ideal for CVD due to their high melting points.…”
Section: Introductionmentioning
confidence: 99%
“…The deposited ruthenium metal itself is not oxidized during the process. Oxygen-containing gas mixtures are commonly used oxidants in respective CVD processes, [2,19,21,22] and thus they might also work in ALD even though, in ALD oxide studies, oxygen has been found to be too inert to react with most of the metal precursors. [26] For the ruthenium precursor, sufficient thermal stability and high reactivity with oxygen are the most critical requisites.…”
Section: Introductionmentioning
confidence: 99%