Growth method for AIIIBV and AIVBVI heterostructures

Федорченко, И. В.; Kushkov, A.R.; Гаев, Д. С.; Rabinovich, Oleg; Маренкин, С. Ф.; Didenko, S.; Legotin, Sergey; Orlova, Marina; Krasnov, A. A.

doi:10.1016/j.jcrysgro.2017.12.013

Cited by 13 publications

(2 citation statements)

References 3 publications

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“…in diameter, whereas single‐crystal diamonds (SCDs) can reach—up to 10 × 10 mm. Moreover, unlike HPHT, this method allows sequential and lateral layers growth of various types using different doping concentrations, which is especially important in semiconductor technology …”

Section: Introductionmentioning

confidence: 99%

High‐Pressure High‐Temperature Single‐Crystal Diamond Type IIa Characterization for Particle Detectors

Черных

Тарелкин

et al. 2020

Physica Status Solidi (a)

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Various samples of multisectoral high‐pressure high‐temperature (HPHT) single‐crystal diamond plate (IIa type) (4 × 4 × 0.53 mm) are tested for particle detection applications. The samples are investigated by X‐ray diffractometry, photoluminescence spectroscopy, Raman spectroscopy, Fourier‐transform infrared, and visible/ultraviolet (UV) absorption spectroscopy. High crystalline perfection and low impurity concentration (in the {100} growth sector) are observed. To investigate detector parameters, circular 1.0 and 1.5 mm diameter Pt Schottky barrier contacts are created on {111} and {100} growth sectors. On the backside, a Pt contact (3.5 × 3.5 mm) is produced. The {100} growth sector is proved to be a high‐quality detector: the full width at half maximum energy resolution is 0.94% for the 5.489 MeV 226Ra α‐line at an operational bias of +500 V. Therefore, it is concluded that the HPHT material {100} growth sector is used for radiation detector production, whose quality is not worse than the chemical vapor deposition method or specially selected natural diamond detectors.

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Section: Introductionmentioning

confidence: 99%

High‐Pressure High‐Temperature Single‐Crystal Diamond Type IIa Characterization for Particle Detectors

Черных

Тарелкин

et al. 2020

Physica Status Solidi (a)

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“…The proper solution is the semi‐polar and non‐polar substrates usage, for which the polarization field in the growth direction is minimal or completely absent. That is why InGaN/GaN film growth in the nonpolar and semipolar planes is an important scientific and technological goal . The films grown in nonpolar a‐plane usage can reduce the built‐in field effect on the injected charge carriers distribution, reduce the nonradiative recombination rate and improve the LED and LD efficiency.…”

Section: Introductionmentioning

confidence: 99%

Influence of Growth Parameters on a‐Plane InGaN/GaN Heterostructures on r‐Sapphire

Orlova

Abdullaev

Mezhenny

et al. 2019

Physica Status Solidi (b)

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The n‐type and p‐type a‐GaN films are successfully grown by MOCVD on the r‐sapphire substrate with smooth mirror surface morphology. The growth rate versus the growth temperature is investigated. Optimum doping parameters by acceptor and donor impurities − 8 × 1017 and 4 × 1018 cm−3 are determined. Low‐temperature amorphous buffer (nucleus) GaN layer and the island growth process with additional doping profile in quantum wells (QW) are investigated. The heterostructures are grown based on direct investigation and simulation results and are investigated by atomic‐force microscopy (AFM) and scanning electron microscopy (SEM). In this work, V‐defects of the structure for non‐polar orientation films are investigated for the first time, thus complementing earlier results for polar and semi‐polar films. The results indicate that the defect density was reduced up to 104 cm−2, with improved surface morphology uniformity. During growth, the influence from V/III flow ratio and doping barriers by indium atoms was detected. Decrease in the V/III ratio up to 1320 at the overgrowth stage of the precipitated low‐temperature nuclei caused growth‐island formation and increased the growth rate in the lateral direction, thus decreasing the dislocation density.

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Heterostructure Simulation for Optoelectronic Devices Efficiency Improvement

Rabinovich

Podgornaya

2020

Software Engineering Perspectives in Intelligent Systems

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Growth method for AIIIBV and AIVBVI heterostructures

Cited by 13 publications

References 3 publications

High‐Pressure High‐Temperature Single‐Crystal Diamond Type IIa Characterization for Particle Detectors

High‐Pressure High‐Temperature Single‐Crystal Diamond Type IIa Characterization for Particle Detectors

Influence of Growth Parameters on a‐Plane InGaN/GaN Heterostructures on r‐Sapphire

Heterostructure Simulation for Optoelectronic Devices Efficiency Improvement

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