High‐Pressure High‐Temperature Single‐Crystal Diamond Type IIa Characterization for Particle Detectors

Abstract

Various samples of multisectoral high‐pressure high‐temperature (HPHT) single‐crystal diamond plate (IIa type) (4 × 4 × 0.53 mm) are tested for particle detection applications. The samples are investigated by X‐ray diffractometry, photoluminescence spectroscopy, Raman spectroscopy, Fourier‐transform infrared, and visible/ultraviolet (UV) absorption spectroscopy. High crystalline perfection and low impurity concentration (in the {100} growth sector) are observed. To investigate detector parameters, circular 1.0 and 1.5 mm diameter Pt Schottky barrier contacts are created on {111} and {100} growth sectors. On the backside, a Pt contact (3.5 × 3.5 mm) is produced. The {100} growth sector is proved to be a high‐quality detector: the full width at half maximum energy resolution is 0.94% for the 5.489 MeV 226Ra α‐line at an operational bias of +500 V. Therefore, it is concluded that the HPHT material {100} growth sector is used for radiation detector production, whose quality is not worse than the chemical vapor deposition method or specially selected natural diamond detectors.

Fabrication of a Micron-Scale Three-Dimensional Single Crystal Diamond Channel Using a Micro-Jet Water-Assisted Laser

“…Furthermore, it was found that there were obvious nitrogen-related optical characteristics in the monophonic region (1 of 400-1400 cm) by FTIR spectrum test (Nicolet iS50, Thermo Scientific, Waltham, MA, USA). Therefore, it accords with the characteristics of type Ib monocrystalline diamond [20,21], with dimensions of 3 × 3 × 1 mm 3 . The substrate was placed on the three-dimensional X-, Y-, and Z-axis removable workpiece stage of a laser system, which comprised a Nd:YAG (Neodymium Doped Yttrium Aluminum Garnet) laser (Lee Laser Inc., Orlando, FL, USA) and a 50 W high-power supply.…”

Laser-Induced Phosphorus-Doped Conductive Layer Formation on Single-Crystal Diamond Surfaces

“…It is known that HPHT substrates possess high resistivities up to 10 14 Ω cm. 51 The measured resistivity after irradiation was approximately 5 × 10 −2 Ω cm. Linear I−V behaviors were obtained even without deposition of metallic electrodes.…”

“…F is an additional applied correction factor for the limiting contour because of the finite rectangular shape. It is known that HPHT substrates possess high resistivities up to 10 14 Ω cm . The measured resistivity after irradiation was approximately 5 × 10 –2 Ω cm.…”

Single photon emission from in situ created nitrogen-vacancies in chemical vapor deposition grown single crystal diamond

“…The It has been observed that the nitrogen incorporation during the growth process favors SPE from one-or twocolor centres. The presence of small amount of oxygen and boron together with nitrogen during the growth process either inhibit the formation of isolated NV − centres or not visible due to background luminescence (impurities and structural defects) in diamond matrix [12,22]. One-color centres in Sample-A may be visible due to its structural perfection as evident from intensity of 1 st order Raman line (figure 3(a)) and the presence of 2 nd order Raman peak (figure 3(b)).…”

“…Apart from ZPL (575 nm) and Raman line (521 nm), a broad peak at 554 nm (2 nd order Raman band) is more intense in the Sample-A compared to Sample-B and Sample-C. The high contrast of the second-order Raman line in Sample-A appears due to minimal background luminescence (impurities and structural defects) and reduced surface contamination[12]. The PL spectrum shown in figure3(c) demonstrates the population of negatively charged nitrogen-vacancy (NV -) centres as indicated by ZPL at 637 nm along with broad phonon sideband ranging from 640 nm to 780 nm backgrounds.…”