Growth mechanisms of DLC films from C+ ions: experimental studies

Lifshitz, Y.; Lempert, G.; Grossman, Eitan; Avigal, I.; Uzan‐Saguy, C.; Kalish, R.; Kulik, J.; Marton, D.; Rabalais, J. W.

doi:10.1016/0925-9635(94)05205-0

Cited by 180 publications

(73 citation statements)

References 20 publications

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“…Films appear to undergo a transition from ta-C to essentially sp 2 bonded a-C above T 1 . A similar trend was previously observed for ta-C deposited by MSIB, 20,21 laser initiated pulsed arc system 15 and also for ta-C:H deposited using a plasma beam source. 22 The T 1 ͑Ϸ140°C͒ in the 130 eV case is equivalent to that observed for the MSIB system 20,21 but much lower than that observed for ta-C:H. 22 A similar decrease in the transition temperature with ion energy was found for ta-C:H while MSIB deposited films show an opposite trend.…”

Section: Variation With Deposition Temperaturesupporting

confidence: 66%

“…Related studies have been carried out on a-C prepared by other methods. 15,[20][21][22] A sharp transition from ta-C to sp 2 bonded a-C was observed for films deposited above the transition temperature while the variation in a͒ Electronic mail: muc@liv.ac.uk the electronic and optical properties was more gradual with the deposition temperature. We place these results on the bulk electronic and optical properties in the context of changes in carbon bonding structure within the films.…”

mentioning

confidence: 90%

“…The roughness was found to remain constant with the deposition temperature, in contrast to the films deposited using MSIB. 20,21 The increase in surface roughness with T s in MSIB is attributed to the diffusion of shallowly implanted ͑subplanted͒ species to the surface. However, since the deposition rates are significantly higher in the FCVA case, we infer that the arrival rate of an ion is of the order of the diffusion rate.…”

Section: Variation With Deposition Temperaturementioning

confidence: 99%

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Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films

Chhowalla

Robertson

Chen

et al. 1997

Journal of Applied Physics

352

127

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The properties of amorphous carbon ͑a-C͒ deposited using a filtered cathodic vacuum arc as a function of the ion energy and substrate temperature are reported. The sp 3 fraction was found to strongly depend on the ion energy, giving a highly sp 3 bonded a-C denoted as tetrahedral amorphous carbon ͑ta-C͒ at ion energies around 100 eV. The optical band gap was found to follow similar trends to other diamondlike carbon films, varying almost linearly with sp 2 fraction. The dependence of the electronic properties are discussed in terms of models of the electronic structure of a-C. The structure of ta-C was also strongly dependent on the deposition temperature, changing sharply to sp 2 above a transition temperature, T 1 , of Ϸ200°C. Furthermore, T 1 was found to decrease with increasing ion energy. Most film properties, such as compressive stress and plasmon energy, were correlated to the sp 3 fraction. However, the optical and electrical properties were found to undergo a more gradual transition with the deposition temperature which we attribute to the medium range order of sp 2 sites. We attribute the variation in film properties with the deposition temperature to diffusion of interstitials to the surface above T 1 due to thermal activation, leading to the relaxation of density in context of a growth model.

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Section: Variation With Deposition Temperaturesupporting

confidence: 66%

mentioning

confidence: 90%

Section: Variation With Deposition Temperaturementioning

confidence: 99%

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Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films

Chhowalla

Robertson

Chen

et al. 1997

Journal of Applied Physics

352

127

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“…A peak in both the sp 3 fraction as well as the density is observed at an ion energy of 88 eV. Peaks in the density versus ion energy curve seem to be system dependent for different research groups and have been observed at; 40, 92, 140, and a threshold value of 50 eV in the results of McKenzie, 15 Weiler, 9 Fallon, 2 and Lifshitz, 16 respectively. The films deposited in the current work 17 use a similar apparatus to those used by McKenzie 15 and Fallon 2 .…”

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confidence: 62%

Nanocrystallites in tetrahedral amorphous carbon films

Ravi

Silva

et al. 1996

Applied Physics Letters

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The microstructure of filtered cathodic vacuum arc deposited tetrahedral amorphous carbon films is studied as a function of ion energy. An optimum energy window in the density and C-C sp 3 content at an ion energy of ϳ90 eV observed in this study. It is shown that the density of the amorphous carbon films are closely related to the sp 3 content. The observation of nanocrystals embedded in the amorphous carbon matrix is reported. Most of the crystals observed by transmission electron microscopy can be indexed to graphite, but some of the crystals can be indexed to cubic diamond. The chemical composition of the crystals is analyzed using electron energy loss spectroscopy ͑EELS͒. The only discernible EELS edge is that of C at an energy of 285 eV. © 1996 American Institute of Physics. ͓S0003-6951͑96͒03230-5͔Filtered cathodic vacuum arc ͑FCVA͒ deposited carbon films have the unique property of producing high quality diamondlike amorphous carbon films with a high sp 3 content. 1,2 The film properties are critically dependent on the ion energy of the species. The carbon plasma initiated from a graphite target by the vacuum arc is sustained during the deposition and macroparticles associated with the arc process are filtered using a 90°bend toroidal solenoid in the deposition system. We have investigated the relationship between the bonding structure in the films and the ion energy of the C species. At a particular threshold ion energy the particles found in the tetrahedral amorphous carbon ͑ta-C͒ films have been studied using transmission electron microscopy ͑TEM͒ and electron energy loss spectroscopy ͑EELS͒. Although there are reports that diamond nanocrystallites have been observed in diamondlike carbon ͑DLC͒ films deposited under low temperature and low pressure conditions, 3-6 direct observation of diamond crystals in deposition techniques that do not operate at high temperatures and high pressures is not common. This is because graphite is the stable crystalline form of carbon under these conditions.Highly tetrahedrally bonded ta-C films have also been deposited using laser initiated vacuum arcs, and pulsed cathodic arcs, 7,8 and hydrogenated ta-C films deposited using a plasma beam source. 9 There is much interest in all of these films due to their unique mechanical properties. 7,10 Recently, Yin et al. 11 have found cauliflower-like growths ͑nanocrys-tals͒ which cannot be indexed to graphite in their FCVA deposited films, which are considered to be precursors for diamond growth. 12 However, there has been no published literature on the observation of diamond nanocrystallites in ta-C films deposited using the FCVA. In this letter, we report on the observation of nanocrystallites that index to diamond, deposited under low temperature/low pressure conditions using such a system.The FCVA films were deposited with a base pressure of 2ϫ10 Ϫ6 Torr which increased to 1ϫ10 Ϫ5 Torr during deposition. The substrate bias is varied from 0 to Ϫ120 V, while the arc current remained constant at ϳ60 A. A toroidal magnetic field ...

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“…4 In addition to PLD, there are a variety of deposition methods for a-C such as magnetron sputtering, 5 plasma enhanced vapor deposition, 6 filtered cathodic vacuum arc, 7 and mass selected ion beams deposition. 8 The a-C has been used in several applications that mainly exploit its mechanical properties such as a protective layer for hard disk drives where films with a high sp 3 fraction have high hardness, 9 a smooth surface, 10 and low friction.…”

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confidence: 99%

Electrical properties of pulsed UV laser irradiated amorphous carbon

Miyajima

Adikaari

Henley

et al. 2008

Applied Physics Letters

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Amorphous carbon films containing no hydrogen were irradiated with a pulsed UV laser in vacuum. Raman spectroscopy indicates an increase in the quantity of sp 2 clustering with the highest laser energy density and a commensurate reduction in resistivity. The reduction of resistivity is explained to be associated with thermally induced graphitization of amorphous carbon films. The high field transport is consistent with a Poole-Frenkel type transport mechanism via neutral trapping centers related to sp 2 sites which are activated under high fields. Decreasing the resistivity is an important feature for use of carbon as an electronic material.

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Growth mechanisms of DLC films from C+ ions: experimental studies

Cited by 180 publications

References 20 publications

Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films

Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films

Nanocrystallites in tetrahedral amorphous carbon films

Electrical properties of pulsed UV laser irradiated amorphous carbon

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