Growth mechanism of zinc oxide thin film by mist chemical vapor deposition via the modulation of [H₂O]/[Zn] ratios

Abstract

The growth mechanism of ZnO films fabricated via mist CVD was proposed by analyzing the growth rates, crystallinities, surface morphologies, and chemical states of the films that were grown when the precursor material supply amounts were fixed and the H2O concentrations were changed. At appropriate conditions, e.g. [H2O]/[Zn] ≈ 60–70 and [Zn] = 20 mM, high-quality ZnO thin films with a high growth rate, (001) dominant orientation, smooth surface, and low oxygen-related defects were obtained. These conditions provided a sufficient diffusion length for the precursor materials on the surface and an appropriate collision probability for the precursor and oxygen sources.

AlOx Thin Films Synthesized by Mist Chemical Vapor Deposition, Monitored by a Fast-Scanning Mobility Particle Analyzer, and Applied as a Gate Insulating Layer in the Field-Effect Transistors

“…We believe that few negatively charged mist particles with an average size larger than ∼550 nm were trapped at the front electrode. The untrapped mist particles passing through the electrode collided with each other because of their acceleration by the electric field, resulting in the generation of fine particles . We believe that few negatively charged mist particles larger than ∼550 μm were trapped at the front electrode.…”

“…The untrapped mist particles passing through the electrode collided with each other because of their acceleration by the electric field, resulting in the generation of fine particles. 34 We believe that few negatively charged mist particles larger than ∼550 μm were trapped at the front electrode. The untrapped mist particles passing through the electrode collided with each other because of their acceleration by the electric field, resulting in the generation of fine particle (see Figure S1 in the Supporting Information).…”

“…However, the morphology and rigidity of the AlO x film network are dominated by the size distribution of mist particles. Nonetheless, further studies on the contribution of the mist particles with larger sizes (of micrometer order) toward the film deposition are required …”

“…Nonetheless, further studies on the contribution of the mist particles with larger sizes (of micrometer order) toward the film deposition are required. 34 3.4. Effect of V m on the Junction Properties at the AlO x /n + -Si Interface and FET Performance.…”

P‐12.8: A Vertical Alignment Technology of Proessing ZnO Sputtered with Ozone Applied on Liquid Crystal on Silicon Display Devices

“…In recent years, there has been a great interests in studying inorganic material such as SiON [9], ZnO [10][11][12], MgF2 [13] and IGZO [8] and applying in LCD devices as alignment layers due to its advantages of high dielectric constant and excellent optical properties. As one of these potential materials, zinc oxide (ZnO) possesses a direct band gap around 3.2eV-3.37eV and a large exciton binding energy of about 60meV at room temperature [14].…”