2022
DOI: 10.1007/s10853-022-07472-6
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Growth mechanism of TiN reaction layers produced on AlN via active metal bonding

Abstract: Interfacial reactions related to the TiN layer growth process between nanocrystalline epitaxial layers of AlN deposited on cplane sapphire and a Ti-containing metal brazing or sintering layer using Ag-Cu-TiH2, Ag-TiH2 and Cu-TiH2 pastes have been investigated. The brazed/sintered samples were heated in vacuum at 850 °C for 30 min. The TiN layer produced at the metal/AlN interfaces consists of TiN particles < 50 nm in size and grain boundary phases including Al-containing Ag and Al-containing Cu. The Al concent… Show more

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Cited by 5 publications
(1 citation statement)
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References 27 publications
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“…Currently, various joining techniques are being applied to achieve the reliable joining of ceramics to themselves or metals (alloys) [11]. Brazing, with good repeatability and relatively small thermal effect, is the main method used in the field of dissimilar material bonding [12][13][14]. However, the different types of chemical bonds cause problems such as poor wettability and poor metallurgical bonding.…”
Section: Introductionmentioning
confidence: 99%
“…Currently, various joining techniques are being applied to achieve the reliable joining of ceramics to themselves or metals (alloys) [11]. Brazing, with good repeatability and relatively small thermal effect, is the main method used in the field of dissimilar material bonding [12][13][14]. However, the different types of chemical bonds cause problems such as poor wettability and poor metallurgical bonding.…”
Section: Introductionmentioning
confidence: 99%