No abstract

Substitutional doping of transition metal dichalcogenide two-dimensional materials has proven to be effective in tuning their intrinsic properties, such as band gap, transport characteristics, and magnetism. In this study, we realized substitutional doping of monolayer rhenium disulfide (ReS) with Mo via chemical vapor deposition. Scanning transmission electron microscopy demonstrated that Mo atoms are successfully doped into ReS by substitutionally replacing Re atoms in the lattice. Electrical measurements revealed the degenerate p-type semiconductor behavior of Mo-doped ReS field effect transistors, in agreement with density functional theory calculations. The p-n diode device based on a doped ReS and ReS homojunction exhibited gate-tunable current rectification behaviors, and the maximum rectification ratio could reach up to 150 at V = -2/+2 V. The successful synthesis of p-type ReS in this study could largely promote its application in novel electronic and optoelectronic devices.

No abstract

Epitaxial growth of large area continuous ReS2 films on mica.

No abstract