2016
DOI: 10.1016/j.jcrysgro.2016.06.047
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Growth mechanism of single-crystalline NiO thin films grown by metal organic chemical vapor deposition

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Cited by 30 publications
(13 citation statements)
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“…In this regard, metal oxide nanomaterials such as NiO nano-disks have shown a promising potential for dye adsorption and photodecomposition. This metal oxide as doped and undoped has been synthesized via different techniques such as sol-gel [156], metal organic chemical vapor deposition [157], precipitation [158], solvothermal route [159], and a hydrothermal method [160]. The latter technique has been used for synthesis of NiO nano-disks (5-20 nm) as the photocatalysts that can photodegrade MB dye under visible light (98.7% in 20 min).…”
Section: D Inorganic Nano-adsorbentsmentioning
confidence: 99%
“…In this regard, metal oxide nanomaterials such as NiO nano-disks have shown a promising potential for dye adsorption and photodecomposition. This metal oxide as doped and undoped has been synthesized via different techniques such as sol-gel [156], metal organic chemical vapor deposition [157], precipitation [158], solvothermal route [159], and a hydrothermal method [160]. The latter technique has been used for synthesis of NiO nano-disks (5-20 nm) as the photocatalysts that can photodegrade MB dye under visible light (98.7% in 20 min).…”
Section: D Inorganic Nano-adsorbentsmentioning
confidence: 99%
“…The effect of film stress on the resistivity of NiO x thin films was reported by Roffi et al who deposited epitaxial films on (001) Al 2 O 3 , and (100) and (111) MgO substrates at 300°C to 600°C at atmospheric pressure using NiCpAllyl and O 2. 58 They observed that the stress in the films results in cation vacancies to accommodate for the lattice mismatch. Hence, with compressive stress the improved crystallinity by the higher deposition temperature leads to more nickel vacancies, which creates more carriers and decreases the resistivity, while with tensile stress the improved crystallinity is achieved with fewer vacancies and carriers, and the resistivity increases 58 .…”
Section: Chemical Deposition Of Nickel Oxide Thin Filmsmentioning
confidence: 99%
“… 58 They observed that the stress in the films results in cation vacancies to accommodate for the lattice mismatch. Hence, with compressive stress the improved crystallinity by the higher deposition temperature leads to more nickel vacancies, which creates more carriers and decreases the resistivity, while with tensile stress the improved crystallinity is achieved with fewer vacancies and carriers, and the resistivity increases 58 . They also investigated the effect of the flow ratios of O 2 and nickel precursor, and showed that the increase in O 2 flow decreases the resistivity by an order of magnitude from 2700 to 250 Ω cm, which they attribute to the improved crystallinity.…”
Section: Chemical Deposition Of Nickel Oxide Thin Filmsmentioning
confidence: 99%
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“…Numerous techniques have been employed for the preparation of good quality NiO thin films. These include chemical bath deposition [8,9], SILAR [10], sol-gel dip coating [11], potentiostatic electrodeposition [12], spin coating [13], electro-hydrodynamic atomization (EHDA) [14], spray pyrolysis [7,[15][16][17], e-beam evaporation [18], radio frequency magnetron sputtering [19], metal organic chemical vapor deposition (MOCVD) [20].…”
Section: Introductionmentioning
confidence: 99%