Growth mechanism of epitaxial SrTiO₃ on a (1 × 2) + (2 × 1) reconstructed Sr(1/2 ML)/Si(001) surface

Abstract

A complete protocol for epitaxial integration of SrTiO3 with a (1 × 2) + (2 × 1) reconstructed Sr(1/2 ML)/Si(001) surface using the PLD method.

Epitaxial growth of perovskite oxide films facilitated by oxygen vacancies

“…To get better insight into the perfect epitaxy of oxygen deficient films, we compared the lattice parameters, tetragonality, and unit-cell volume of the 150 nm films with the theoretical values, which were estimated using elastic considerations [S1 and expressions (1)(2)(3)(4)(5)(6) The increased parameters c, V, and t can be related to a chemical expansion of the unstressed oxygen deficient material of the films. First, we considered a commonly accepted isotropic chemical expansion, i.e.…”

“…1,2 Single-crystal-type epitaxial films of perovskite oxides represent an essential part of modern research. [3][4][5][6][7][8][9][10][11] Beyond usage in advanced integrated devices and as high-quality crystals for basic investigations, epitaxial films bring a plethora of remarkable novel phenomena that stem from couplings between film with underlying substrate. Elastic coupling is especially important.…”

“…We note that epitaxial STO films can be grown on commercial silicon substrates, which is of immense practical importance. 4,20 The substrate-induced biaxial in-plane misfit strain is compressive in thin STO films on Si, where the substrateensured in-plane lattice parameter is B3.840 Å. In this work, we use (001)(La 0.3 Sr 0.7 )(Al 0.65 Ta 0.35 )O 3 (LSAT) substrates to enable an in-plane lattice parameter of 3.868 Å and cube-on-cube epitaxial growth of in-plane compressed STO films, resembling those on Si.…”

Chaos at Interface Brings Order into Oxide/Silicon Structure

“…[ 9–11 ] Moreover, a sharp oxide/Si interface, a major factor controlling the functional properties of the heterostructure, [ 9,12,13 ] is often difficult to achieve. [ 14,15 ] Therefore, it is only natural to wonder whether a regular metal reconstruction presents the optimal route to oxide/Si integration.…”

Epitaxial growth of neodymia stabilized zirconia on Si(001) substrate using dynamic aurora PLD

“…6),7) Reportedly, only a few oxides enable direct epitaxial growth on Si(001), such as yttria stabilized zirconia [Y 0.15 Zr 0.85 O 1.925 (YSZ)], 8) BaO, 9) SrO, 10) MgO, 11) and SrTiO 3 . 12), 13) In the case of SrTiO 3 , earlier reports have described that the deposition of thin SrO layers before the deposition of SrTiO 3 thin film is extremely important for the realization of epitaxial growth of SrTiO 3 on Si(001). 14) Therefore, epitaxial SrTiO 3 on Si(001) should be described as SrTiO 3 /SrO/Si(001).…”