Growth

High resolution X-ray diffraction, X-ray multiple diffraction and cathodoluminescence as combined tools for the characterization of substrates for epitaxy: the ZnO case

“…These defects generally result from inherent problems related to both the large lattice mismatch and thermal expansion differences in the layer and the substrate. 2 Thus, homoepitaxy on ZnO substrates constitutes a promising route to achieve high quality ZnO epitaxial layers for improving optical, structural and electrical properties, and thereafter, to produce better devices.…”