Growth characteristics of chloride‐based SiC epitaxial growth

Abstract

In this study some aspects of the chloride‐based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability and the effect that the C/Si and Cl/Si ratios have on the growth are studied. It is found that MTS is the most efficient precursor and that the growth becomes carbon limited at C/Si < 1. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

SiC epitaxy growth using chloride-based CVD

“…However the MTS approach was found to be more efficient: typically to achieve 100 µm/h using the HCl process a Si/H 2 ratio of 0.6% was needed whereas a ratio of 0.25% was used for the MTS process [12]. In the previous study no gas liner was used to direct the gas straight into the susceptor in laminar flow conditions; this has been added in the present study together with a redesign of the susceptor.…”

Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

“…10,11 12 Of these, MTS was previously shown to be the most efficient precursor for high growth rates. 13,14 As carrier gas, Pd-purified H 2 was used. Table 1 gives an overview over the growth conditions and the respective number of samples.…”

Precursors and defect control for halogenated CVD of thick SiC epitaxial layers

“…Low pressure vertical hot wall CVD (15-20 Torr) using standard chemistry (SiH4 + C3H8) has been reported to achieve high growth rates (> 100 µm/h) [44,45]. On the other hand introducing chlorine into the gas mixture (chloride-based) [46], by adding HCl [47][48][49][50] or using some chlorinated silicon precursor, such as trichlorosilane (TCS) [51][52][53] or tetrachlorosilane (TET) [54][55][56], or by using methyltrichlorosilane (MTS) [57][58][59][60] as a single molecule will prevent nucleation in the gas phase, due to the stronger Si-Cl bond (400 kJ/mol) as compared to the Si-Si bond (226 kJ/mol) [61]. The addition of chlorine into the gas mixture alters the species involved in the reaction.…”