Growth behavior of AlInGaN films

Shang, Jingzhi; Zhang, B.P.; Mao, Minqian; Cai, Lihan; Zhang, J.Y.; Fang, Zhaoxi; Liu, B.L.; Yu, Jiaqi; Wang, Q.M.; Kusakabe, Kazuhide; Ohkawa, Kazuhiro

doi:10.1016/j.jcrysgro.2008.09.012

Cited by 15 publications

(8 citation statements)

References 17 publications

(20 reference statements)

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“…We assumed on other reports with reference that the peak in adjacent to the 35.1 was denoted from AlInGaN. 13) The strain increased when Indium was added as we expected versus the AlGaN active layer. It also means AlInGaN can be grown and contain in the active layer.…”

Section: Resultsmentioning

confidence: 93%

Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy

Lee

Jeon

Jung

et al. 2012

Jpn. J. Appl. Phys.

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In this paper, we approached a novel fabrication for non phosphor white light emitting diodes (LEDs) by the growth of AlGaN/InAlGaN doublehetero structures using by mixed-source hydride vapor phase epitaxy (HVPE) system with multi-sliding boat. It is unique crystal growth technology different from conventional HVPE and metal organic chemical vapor deposition (MOCVD) system using mixed metal source of aluminum, indium and gallium. The characterization of non phosphor white LEDs was examined by photoluminescence (PL) and electroluminescence (EL). The results of EL were found green and yellow emissions as spectrum peaks near 500, 550, and 610 nm definitely. The CIE chromaticity coordinates of white LEDs was measured at injection current 30 mA. Our results are nearly positions; at x ¼ 0:28 and y ¼ 0:31. Even though the LED needs more improved in optical properties, we demonstrated achieving phosphor-free solid-state white lighting.

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Section: Resultsmentioning

confidence: 93%

Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy

Lee

Jeon

Jung

et al. 2012

Jpn. J. Appl. Phys.

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“…film, but there existed V-shaped pits with six-wall sides along (1011) on the surface of the AlInGaN samples. In the previous report about InGaN, V-shaped pits were usually considered to be related to indium segregation on the {1011} plane [16,17]. To investigate the effect of TMA flow rate on the optical properties of quaternary AlInGaN films, photoluminescence (PL) characteristics of the samples are shown in Figure 5.…”

Section: Figure 1amentioning

confidence: 99%

The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers

et al. 2017

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Abstract:In this work, a series of quaternary Al x In y Ga 1−x−y N thin films have been successfully achieved using metal organic chemical vapor deposition (MOCVD) method with adjustable trimethylaluminum (TMA) flows. Surface morphology and optical properties of Al x In y Ga 1−x−y N films have been evaluated. The indium segregation effect on the enhancement of UV luminescence emission in Al x In y Ga 1-x-y N films with increasing TMA flows was investigated. Our results shed some lights on future optical materials design and LED/LD applications.

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“…It can be concluded from the room temperature Hall mobility data of 2200 cm 2 /(Vs) (Al 0.72 In 0.11 Ga 0.17 N), 4 and 1770 cm 2 /(Vs) (Al 0.83 In 0.13 Ga 0.04 N), 5 and 1318 cm 2 /(Vs) (Al 0. 12 In 0.006 Ga 0.874 N), 6 8 that increasing the composition dependent electron mobility assists to enhance the performance of the In x Al y Ga 1-x-y N heterojunction field effect transistors (HFETs). In our previous work, 9 we established the model of the alloy disorder scattering limited mobility in AlInGaN/GaN heterojunctions using virtual crystal approximation, and put forward some guidance to estimate the direction of the mobility change with the Al(In,Ga)N composition.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, the growth of this quaternary AlInGaN film is still challenging due to the widely existed alloy compositional fluctuations caused by a very large lattice mismatch between the InN and AlN (GaN). [10][11][12] D.-B. Li et.…”

Section: Introductionmentioning

confidence: 99%

Theoretical analysis of the mobility of two-dimensional electron gas in the quaternary AlxInyGa1-x-yN/GaN heterojunctions limited by the alloy composition fluctuation

Zhang

Liu

et al. 2017

AIP Advances

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We established the model of the electron mobility limited by the alloy composition fluctuation scattering in the quaternary AlxInyGa1-x-yN/GaN heterojunctions for the first time. The alloy composition fluctuation along the AlxInyGa1-x-yN/GaN heterointerface was considered and characterized by the lateral correlation length L, and the fluctuations of aluminum and indium mole fractions (Δx and Δy) independent to each other. The situation of alloy composition fluctuation is investigated in the following cases. Only x or y fluctuates, and both x and y fluctuate with equal/unequal amplitudes in the same/opposite direction. We find that the scattering with both x and y fluctuating in the same direction is the weakest, while x and y fluctuating in the opposite directions leads to the strongest scattering. This in nature stems from the disparity of the bandgap and polarization in AlInN, AlGaN and GaN. The effects of different parameters, such as x and y, Δx and Δy, L, and the thickness of AlxInyGa1-x-yN barrier layer d on the mobility are also studied. The model will in principle give a universal explanation to the effect of alloy composition fluctuation scattering on the carrier mobility in the GaN-based heterostructures with ternary or quaternary alloy barrier layers.

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Growth behavior of AlInGaN films

Cited by 15 publications

References 17 publications

Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy

Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy

The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers

Theoretical analysis of the mobility of two-dimensional electron gas in the quaternary AlxInyGa1-x-yN/GaN heterojunctions limited by the alloy composition fluctuation

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