Growth and transport properties of relaxed epilayers of InAs on GaAs

Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate

“…For a thickness of 5 lm, InAs layer has a FWHM of 156 arcsec under the same substrate temperature. Przesławski et al (2000) reported a FWHM of 170 arcsec for a 5 lm-thick InAs layer. The poor crystalline quality at higher growth temperature is probably due to the formation of extended defects due to the evaporation of arsenic from the surface.…”

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

“…In 0.53 Ga 0.47 As layers were deposited by MBE on SI-InP and GaAs as well as SI-GaAs. We carried out the calculations as described previously [3] for a few samples of InAs, In 0.53 Ga 0.47 As and GaAs with different charge carrier concentrations [3,[26][27][28][29][30][31][32]. The procedure consisted of the following steps:…”

“…We present a more detailed example of the calculation for an InAs sample measuring 9.0 m thick (see Tables 2, 4, 5, 6, and 7, and all figures) [28]. The InAs samples have the lowest (Table 2).…”

“…The results are presented in Figures 3, 4, 5, 6, 7, 8, 9, and 10 with the parameters used to solve the neutrality equation (according to [3,32]). In addition to the results presented in [28], we provide the Hall curves calculated by using the dependence = ⟨ 2 ,ℎ ⟩/⟨ ,ℎ ⟩ 2 and the calculated values of , , and 2 versus temperature in Figures 11, 12, 13, and 14. we used the metallurgical thickness of the epitaxial layer, which allowed us to calculate the conformity between the thickness values used to solve for the concentration and resistivity versus temperature. At low temperatures, there was an increase in concentration (Figure 3), which was probably due to the presence of impurity band conduction.…”

“…These sources form the parts used to solve the neutrality equation, and the solution is obtained by numerical computer calculation. The values of 2.14 ⋅ 10 such charge carrier sources are chosen such that the calculated concentration curve approximates the experimental data [3,[26][27][28][29][30][31][32], as demonstrated for our samples (Table 2) by the example in Figure 3. We believe that the measured conductivity is affected by the presence of different donors in the semiconductor layers.…”