Growth and study of CuIn1−xGaxSe2 chalcopyrite compounds for solar cell applications

Kouhlane, Y.; Chouial, B.; Gagui, S.; Hadjoudja, B.; Chibani, Abdelghani

doi:10.1007/s12648-014-0441-6

Cited by 6 publications

(3 citation statements)

References 19 publications

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“…The lattice mismatch defined by δ = 2∣ a s − a e ∣/( a s + a e ) [ 52 ] has been calculated using the lattice constants of buffers, HTLs, and the CIGS absorber reported in the former researches. [ 53–59 ] As a result, the overall performance of the CIGS‐based TFSC with Cu 2 O HTL would be improved by lowering recombination loss in the junction than the PV device without HTL.…”

Section: Resultsmentioning

confidence: 99%

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

Sultana

Islam

Ahmed

2021

Physica Status Solidi (a)

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Herein, the widely available and cheapest cuprous oxide (Cu2O) as hole transport layer (HTL) is proposed to improve the performance of thin‐film copper indium gallium selenide (CIGS) solar cell. Solar Cell Capacitance Simulator in One Dimension (SCAPS‐1D) is utilized to design and study output characteristics of the modeled photovoltaic (PV) cell. A comparison between the proposed cell with Cu2O HTL and the reference CIGS solar cell is presented. The PV performances of CIGS solar cells are analyzed by changing thickness, carrier density and defects of different layers, operating temperatures, and recombination velocity at back contact. Optimal thicknesses of Cu2O HTL, CIGS absorber, cadmium sulfide (CdS) buffer, and the fluorine‐doped tin oxide (FTO) window layer are obtained to be 0.3, 0.8, 0.05, and 0.05 μm, respectively. Efficiency of 30.30% is achieved for the proposed CIGS PV device with Cu2O HTL. The simulated results imply that the proposed Cu2O as HTL can be used to show proficient and cost‐effective thin‐film CIGS PV cells.

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Section: Resultsmentioning

confidence: 99%

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

Sultana

Islam

Ahmed

2021

Physica Status Solidi (a)

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“…In this work, we use CuIn0.72Ga0.28Se2 chalcopyrite thin films deposited using the flash evaporation technique onto glass and stainless-steel (STS) substrates. The source materials were prepared by the direct fusion of elements in a stoichiometric ratio and sealed in a quartz ampoule, the preparation details of the CuIn0.72Ga0.28Se2 in ingots and thin film forms have been described previously [4]. The electrical transport properties of the obtained CuIn0.72Ga0.28Se2 layers have been carried out at ambient temperature by Ecopia HMS-3000 measurement system based on the Hall Effect method.…”

Section: Methodsmentioning

confidence: 99%

Optical Properties Evaluation of CuIn1-xGaxSe2 Thin Films Using OPAL2 Calculator

Kouhlane

Bouhafs

Nwadiaru

et al. 2022

JSMPM

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OPAL2 calculator has proved to be an effective technique for simulating optical losses in various materials for various applications. This study demonstrates the use of this softwareto simulate the transmittance (T) and reflectance (R) and hence evaluate the optical properties of flash evaporated CuIn1-xGaxSe2(CIGS) thin films with a ratio x = 0.28 deposited on stainless-steel (STS) and glass substrates. The simulation results exhibit excellent accuracy of the modeled design presented in this work. The CIGS with a ratio of gallium x = 0.3 showed the best matching between simulated and experimental T and R patterns. Moreover, the simulation shows that an increase in the gallium concentration increases optical losses. Finally, the results demonstrate the application of the freeware program OPAL2 to practically simulate the optical proprieties of CIGS thin films.

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“…The lattice constant for the various materials has been calculated based on earlier research [ 75 , 76 ]. Lattice mismatch between CIGS and ZnS is 7.15 %, which is less than that of the ETLs used in earlier investigations.…”

Section: Output Performance Of Proposed Cigs Solar Cellsmentioning

confidence: 99%

A qualitative Design and optimization of CIGS-based Solar Cells with Sn2S3 Back Surface Field: A plan for achieving 21.83 % efficiency

Rahman,

Hasan,

Chowdhury

et al. 2023

Heliyon

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Growth and study of CuIn1−xGaxSe2 chalcopyrite compounds for solar cell applications

Cited by 6 publications

References 19 publications

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

Optical Properties Evaluation of CuIn1-xGaxSe2 Thin Films Using OPAL2 Calculator

A qualitative Design and optimization of CIGS-based Solar Cells with Sn2S3 Back Surface Field: A plan for achieving 21.83 % efficiency

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Growth and study of CuIn1−xGaxSe2 chalcopyrite compounds for solar cell applications

Cited by 6 publications

References 19 publications

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu2O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu2O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

Optical Properties Evaluation of CuIn1-xGaxSe2 Thin Films Using OPAL2 Calculator

A qualitative Design and optimization of CIGS-based Solar Cells with Sn2S3 Back Surface Field: A plan for achieving 21.83 % efficiency

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Product

Resources

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Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension