Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs

Poole, I.; Singer, K. E.; Peaker, А. R.; Wright, Andrew

doi:10.1016/0022-0248(92)90181-h

Cited by 58 publications

(32 citation statements)

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“…Table 1. Since the solubility limits of Sc and Er in GaAs are on the order of 10 17 cm À 3 [9][10][11], which corresponds to a volume concentration of only 0.0005%, we can assume that the amounts of Sc and Er been contained in the samples here are well beyond their solubility limits in InGaAs. This agrees with our cross-sectional scanning transmission electron microscopy (STEM) studies, from which the existence of nanoparticles have been observed at relatively low ScAs% and ErAs% of 0.66% and 0.2%, respectively, although the formation of nanoparticles may occur at even lower concentrations.…”

Section: Methodsmentioning

confidence: 99%

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Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectricapplications

Liu¹,

Ramu²,

Bowers³

et al. 2011

Journal of Crystal Growth

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a b s t r a c tWe report the molecular beam epitaxy (MBE) growth and the comparative systematic study of the electrical and thermoelectric characterizations of ScAs:In 0.53 Ga 0.47 As and ErAs:In 0.53 Ga 0.47 As nanocomposites. The peak room-temperature power factor of ScAs:InGaAs is 38% comparing to that of ErAs:InGaAs. The carrier concentration change of the nanocomposites versus the ScAs and ErAs incorporation levels below 2.2% is explained as due to the formation of nanoparticles with different sizes and densities. The carrier concentration difference between the two types of nanocomposites at the same incorporation level of ScAs and ErAs is explained by the size difference between the ScAs and ErAs nanoparticles.

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Section: Methodsmentioning

confidence: 99%

“…Specifically, ScAs is also a semimetal with a similar band structure to the widely studied ErAs [6][7][8]. The solubility limit of Sc in GaAs is estimated to be on the order of 10 17 cm À 3 [9], which is similar to that of Er [10,11]. Sc 0.32 Er 0.68 As films have been grown lattice matched on (0 0 1) GaAs [5].…”

Section: Introductionmentioning

confidence: 98%

Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectricapplications

Liu¹,

Ramu²,

Bowers³

et al. 2011

Journal of Crystal Growth

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“…Er-doped semiconductors have been attracting great interest because they are expected to be applied to optical communication systems (Poole et al, 1992;Wang & Wessels, 1995;Takahei et al, 1994;Tabuchi et al, 1996). In this work, optical properties of Er doped in semiconductors were found to depend strongly on growth conditions (Fujiwara et al, 1997).…”

Section: Introductionmentioning

confidence: 86%

Local structure study of dilute Er in III–V semiconductors by fluorescence EXAFS

Ofuchi

Kawamura

Tsuchiya

et al. 1998

J Synchrotron Radiat

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For understanding the luminescence of Er atoms in III±V semiconductors, OMVPE-grown InP doped with Er has been investigated by¯uorescence EXAFS (extended X-ray absorption ®ne structure) in order to study the local structure around Er atoms. The local structures around the Er atoms doped in InP, with doping as dilute as 3 Â 10 12 Er atoms in a 1.5 mm Â 1.0 mm spot, were successfully measured by¯uorescence EXAFS. The EXAFS analysis revealed that the Er atoms doped in InP above 853 K (which showed low luminescence) formed the rock-salt-structure ErP, while the Er atoms doped in InP below 823 K (which showed high luminescence) substituted on the In site of InP. The dependence of the local structure on growth temperature was observed for the samples doped with 3 Â 10 12 atoms and 1.2 Â 10 13 atoms of Er.

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“…Optical activity of Er disappeared entirely after the Er atoms had located in the lattice sites of GaAs. This effect may be associated either with the removal of defects activating photoluminescence of Er or with a change of bonding character between erbium or arsenic atoms, when the Er atoms tend to occupy tetrahedral lattice sites.Much better quality samples of Er doped III-V semiconductors are grown by MOCVD [3,36] or MBE [37,38]. In a direct growth of doped layers all problems related to the post-implantation annealing are avoided.…”

mentioning

confidence: 99%

“…Much better quality samples of Er doped III-V semiconductors are grown by MOCVD [3,36] or MBE [37,38]. In a direct growth of doped layers all problems related to the post-implantation annealing are avoided.…”

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confidence: 99%

Implantation of Rare-Earth Atoms into Si and III-V Compounds

1993

Self Cite

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Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 10 18 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.PACS numbers: 61.80. Jh, Introductory remarksRecently we witness a burst of interest in the doping of Si and III-V compound semiconductors with rare earths (RE). The attention to these exotic dopants was attracted by their potential utilization in constuction of novel light emitting devices (LEDs). Rare earth doped semiconduction are expected to combine the well-known sharp, temperature stable, ultra narrow, atomic-like emission originating from the electronic transitions within the 4f shell of RE impurities with the efficient electrical pumping of this emission by electrons and holes. The inherently long lifetime of the 4f emission limits a possible light output from these devices to small power in a microwatt range. However, if RE doping of Si would result in the constuction of non-degrading efficient LEDs, even with a moderate quantum efficiency at room temperature, then this could lead to a real intrachip (59) 60A. Kozanecki' J.M. Langer' A.R. Peaker optical communication -a long awaited technological goal in the field of VLSI circuits [1,2].Rare earths are very often used as the light emitting centres in wide energy gap ionic crystals and glasses. In fact, most powerful solid state lasers are made of an Nd doped glass. REs are also often utilised in other solid state lasers. In all these cases high dopant concentration is achieved during the crystal or glass growth by adding required amounts of appropriate RE compound to the melt from which a laser rod is pulled out.In semiconductor devices, the active volume is much smaller and planar technologies dominate processing. Very low solubility of REs in covalent semiconduction narrows the range of available technologies of the growth of RE doped semiconduction to non-equilibrium techniques. Among them, two are feasible. One bases on metalloorganic chemical vapour deposition (MOCVD) -a standard technology for semiconductor growth. Initial problem of finding suitable RE compound which would crack in the MOCVD reactor seems to be finally resolved. This technology has been mastered particularly by the group of. K. Takahei [3]. Alternative technology, most suitable for Si doping with REs, is ion implantation, which will be the main topic of our review.Additional problem related to RE doping of Si and III-V compounds is caused by extremely high chemical activity of the RE elements, particularly their notorious affinity to oxygen and other group-VI elements. This can be turned into advantage, however, in the purification of the materials grown from the melt (i.e. liquid phase epitaxy) in the presence of REs [4]...

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Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs

Cited by 58 publications

References 7 publications

Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectricapplications

Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectricapplications

Local structure study of dilute Er in III–V semiconductors by fluorescence EXAFS

Implantation of Rare-Earth Atoms into Si and III-V Compounds

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