Growth and Some Properties of Heterostructures Based on New Narrow-Gap Semiconductor ZnCdHgTe

Sydorchuk, P.; Khlyap, G.; Andrukhiv, A. M.

doi:10.1002/1521-4079(200106)36:4/5<361::aid-crat361>3.0.co;2-5

Cited by 11 publications

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was found out that the epitaxial layers ZnCdHgTe are not compositionally homogeneous (see [3] for details). It was found out that the epitaxial layers ZnCdHgTe are not compositionally homogeneous (see [3] for details).…”

Section: Fig3 Energy-band Diagram Of the P-p-heterostructure Zncdhgmentioning

confidence: 99%

“…The investigations of electric properties of the structures ZnCdHgTe film -CdTe substrate as a whole (Fig.3, the energy band diagram is constructed according to the model described in [3]) were demonstrated C-V-characteristics typical for the barrier structures (Fig.4, a). Capacitance-voltage measurements performed at the room temperature under the test signal frequency f = 1 kHz have revealed linear function ) ( The important parameter determining the workability of any active element based on the heterostructure (especially if the active element supposed to be integrated in the IRoptoelectronic device, as in our case) is a capacitance of the space charge region C ss (where index ss states for surface states) formed at the interface between contacting materials.…”

Section: Fig3 Energy-band Diagram Of the P-p-heterostructure Zncdhgmentioning

confidence: 99%

See 1 more Smart Citation

Nanoindentation as a Tool for Formation of Thin Film-Based Barrier Structures

Khlyap

Sydorchuk

2005

MRS Proc.

Self Cite

View full text Add to dashboard Cite

A 2 B 6 semiconductors and their solid solutions (ZnSe, ZnTe, CdTe, ZnCdHgTe) are matter of choice for near-and far-infrared optoelectronics. The importance of maximally reduced degree of defectness for these materials is not subjected to discussion. However, preparation of high quality barrier structures based on these compounds by means of MBE, laser technology or liquid phase technique is not always successful due to lattice parameters mismatch. At the same time, good selection of a proper buffer layer may also pose some unavoidable problems. From this point of view the nanoindentation as a tool of defect engineering can be effective for fabrication of surface barrier structures. The first experimental results and numerical simulation of experimental data obtained under investigation of nanoindentation effect on electric characteristics (in particular, current -voltage (I-V) and capacitance -voltage (C-V)) of ZnCdHgTe thin films and ZnCdHgTe/Cd(Zn)Te heterostructures at the room temperature are presented.

show abstract

Section: Fig3 Energy-band Diagram Of the P-p-heterostructure Zncdhgmentioning

confidence: 99%

Section: Fig3 Energy-band Diagram Of the P-p-heterostructure Zncdhgmentioning

confidence: 99%

Nanoindentation as a Tool for Formation of Thin Film-Based Barrier Structures

Khlyap

Sydorchuk

2005

MRS Proc.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Quaternary solid solutions Zn x Cd y Hg 1-x-y Te intensively investigated during the last years [1,2] are usually grown by the liquid-phase epitaxy method [3]. Epilayers with compositions x and y not exceeding 0.2 are of particular interest for different optoelectronic applications because this material appears as an alternative to the well-known ternary solid solutions Cd y Hg 1-y Te and Zn x Hg 1-x Te [3 and references therein].…”

Section: Introductionmentioning

confidence: 99%

Smart Heterostructures Based on Solid Solution ZnCdHgTe

et al. 2003

View full text Add to dashboard Cite

Current -voltage (IVC) and capacitance -voltage (CVC) of heterostructures (Cd, Zn)Te/ZnCdHgTe are studied for the first time. Thin films Zn x Cd y Hg 1-x-y Te were grown on monocrystalline (111) CdTe and ZnTe substrates by PLE technology. Deposition was carried out on substrates held at temperatures near 290 K. The thickness of investigated films was estimated to be about 5 µm. Electric characteristics of the as-grown structures were examined under T = 77 -290 K in the wide range of applied bias. All investigated samples have demonstrated diode-like IVC and CVC under test signal frequency f = 1 kHz. Heterostructures CdTe/ZnCdHgTe have exhibited a room temperature photosensitivity in spectral range 0.50 -0.65 µm..

show abstract

Growth and Electrical Properties of New Semiconductor Compound ZnCdHgTe

Khlyap¹,

Sydorchuk²

2001

Cryst. Res. Technol.

View full text Add to dashboard Cite

Growth technology and electric properties of the new semiconductor compound ZnCdHgTe obtained by modified liquid phase epitaxy technique on (111) CdTe single crystal substrates are described. Principal attention is focused on current‐voltage characteristics of the heterostructures ZnxCdyHg1‐x‐yTe/CdTe. The mechanism of carriers transfer, in particular, multi‐mode regime governed by the charge states localized at the interface, is studied. Results of numerical experiment performed for the first time for examined heterostructures are in good qualitative and quantitative agreement with the data of electric measurements.

show abstract

Growth and Some Properties of Heterostructures Based on New Narrow-Gap Semiconductor ZnCdHgTe

Cited by 11 publications

References 0 publications

Nanoindentation as a Tool for Formation of Thin Film-Based Barrier Structures

Nanoindentation as a Tool for Formation of Thin Film-Based Barrier Structures

Smart Heterostructures Based on Solid Solution ZnCdHgTe

Growth and Electrical Properties of New Semiconductor Compound ZnCdHgTe

Contact Info

Product

Resources

About