2013
DOI: 10.1016/j.physrep.2012.09.006
|View full text |Cite
|
Sign up to set email alerts
|

Growth and self-organization of SiGe nanostructures

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

4
155
1
2

Year Published

2014
2014
2024
2024

Publication Types

Select...
9
1

Relationship

0
10

Authors

Journals

citations
Cited by 194 publications
(162 citation statements)
references
References 482 publications
4
155
1
2
Order By: Relevance
“…In the perfect alloy, the solubility of the component species is assumed to be equal and the atoms are randomly distributed across lattice sites. However, differences in miscibility and growth kinetics [40] may lead to phase segregation or the formation of domains, [41] introducing short-range order in the mass distribution and forming semi-extended high-frequency modes that are spatially larger than the correlation length. Hence, it is possible for an alloy 1D nanostructure to conduct heat ballistically at a finite length scale that is much larger than the average domain size.…”
Section: Discussionmentioning
confidence: 99%
“…In the perfect alloy, the solubility of the component species is assumed to be equal and the atoms are randomly distributed across lattice sites. However, differences in miscibility and growth kinetics [40] may lead to phase segregation or the formation of domains, [41] introducing short-range order in the mass distribution and forming semi-extended high-frequency modes that are spatially larger than the correlation length. Hence, it is possible for an alloy 1D nanostructure to conduct heat ballistically at a finite length scale that is much larger than the average domain size.…”
Section: Discussionmentioning
confidence: 99%
“…£ ÔÎÖÚÂÇ ÑAEÐÑÓÑAEÐÑ ÓÂÔÒÓÇAEÇÎÈÐÐÞØ AEÇ×ÇÍÕÑÄ ÓÇÛÇÐËÇ AEÎâ ÍÑÓ-ÓÇÎâÙËÑÐÐÑÅÑ ÑÃÝÈÏ ÏÑÉÇÕ ÃÞÕß ÒÓÇAEÔÕÂÄÎÇÐÑ Ä ËÐÑÌ ×ÑÓÏÇ. ¦ÔÎË ÄÄÇÔÕË ×ÖÐÍÙËá Dr 1 À exp ih dur [49], ÕÑ ÄÞÓÂÉÇÐËÇ AEÎâ ÔÕÂÕËÚÇÔÍÑÅÑ ×ÂÍÕÑÓ ¥ÇÃÂâ ë µÑÎÎÇÓ ÊÂÒËÛÇÕÔâ ÍÂÍ ¥Îâ ËÔÔÎÇAEÑÄÂÐËâ ×ÑÓÏÞ Ë ÓÂÊÏÇÓÑÄ ¬´ÒÓÇËÏÖÜÇ-ÔÕÄÇÐÐÑ ËÔÒÑÎßÊÖáÕÔâ ÏÇÕÑAEÞ ÒÓÑÔÄÇÚËÄÂáÜÇÌ àÎÇÍÕ-ÓÑÐÐÑÌ Ë ÂÕÑÏÐÑ-ÔËÎÑÄÑÌ ÏËÍÓÑÔÍÑÒËË [99]. £ ÒÑÔÎÇAEÐËÇ ÅÑAEÞ AEÎâ ÃÑÎÇÇ ÄÞÔÑÍÑÓÂÊÓÇÛÂáÜËØ ÔÕÓÖÍÕÖÓÐÞØ ËÔÔÎÇ-AEÑÄÂÐËÌ ÄÔÈ ÚÂÜÇ ËÔÒÑÎßÊÖÇÕÔâ ÏÇÕÑAE ÔÍÂÐËÓÖáÜÇÌ ÕÖÐ-ÐÇÎßÐÑÌ ÏËÍÓÑÔÍÑÒËË [99] …”
Section: ³õâõëôõëúçôíââ õçñóëâ óçðõåçðñäôíñì Aeë×óâíùëëunclassified
“…Хорошо известно, что для широкого диапазона со-ставов напряженных (сжатых) структур Si 1−x Ge x /Si(001) упругая релаксация напряжений через образование са-моформирующихся наноостровков предшествует пла-стической релаксации за счет формирования дефек-тов (см., например, обзоры [1,2]). Однако сам меха-низм зарождения наноостровков несколько различен для структур с большой и малой долей Ge.…”
Section: Introductionunclassified