Growth and properties of self‐catalyzed (In,Mn)As nanowires

Abstract

Mn‐assisted molecular beam epitaxy is used for the growth of (In,Mn)As nanowires (NWs) on GaAs(111)B. The transmission electron microscopy measurements revealed that despite the relatively high growth temperature regime this technique can be used to obtain (In,Mn)As NWs with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated NWs or on their side‐walls, although the growth processes of NWs were accompanied by the formation of MnAs precipitates between the NWs at the interface of the wetting layer. The results obtained are of importance for the realization of new spintronic nanostructured materials. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

Formation of New Glass-Ceramic Materials with Controllable Dielectric and Magnetic Properties

“…However, ferroelectrics and ferromagnets, like any functional materials, have a number of disadvantages that limit their use. [16][17][18][19][20]. The disadvantages of ferrite devices are due to the temperature characteristics of ferrites, the difficulties of achieving high performance due to the inertia of the control magnetic systems, and high power consumption [5,6,21,22].…”