1995
DOI: 10.1016/0040-6090(95)06875-9
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Growth and mechanical anisotropy of TiN thin films

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Cited by 93 publications
(27 citation statements)
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“…Nanoindentation has been employed effectively for the study of anisotropic systems in materials science (Meng and Eesley, 1995;Turner et al, 1999). Data analysis procedures for hardness calculations do not need to change for anisotropic systems.…”
Section: Anisotropymentioning
confidence: 99%
“…Nanoindentation has been employed effectively for the study of anisotropic systems in materials science (Meng and Eesley, 1995;Turner et al, 1999). Data analysis procedures for hardness calculations do not need to change for anisotropic systems.…”
Section: Anisotropymentioning
confidence: 99%
“…The values (397 GPa (0.35)) of TiN (222) reflection at RT are similar to the results (407 GPa (0.32)) that are also based on first principal from Zhang et al [37] for TiN (222) reflection. And the values (451 GPa (0.24)) for bulk TiN match with 469 GPa (0.25) [38], 427 GPa (0.19) [39], and 440 GPa [40]. These indicate that the elastic constants at RT in Refs.…”
Section: Macroscopic Stress-strain and Load Partitioningmentioning
confidence: 63%
“…TiN that grows almost completely textured growth of (111) TiN on Si(100) is achieved. 19 Narayan et al 20 had reported epitaxial growth of TiN on Si(100) by laser ablation with the cube-on-cube orientation (TiN [l00]//Si[100]). In this study, although the TiN film grown on Si(100) shows strong cube-oncube orientational order, epitaxial growth is not achieved at temperatures as low as 150°C.…”
Section: Resultsmentioning
confidence: 99%