Growth and magnetism of low-temperature deposited Fe/Si(111) films as an intermediate layer for suppression of silicide formation

Abstract

Low temperature ͑LT: 100 K͒ deposition of Fe on Si͑111͒7 ϫ 7 surface effectively reduces Fe-silicide formation at the Fe/Si interface, as compared with conventional room temperature ͑RT͒ growth. The interface condition of 5-15 monolayers ͑ML͒ LT-Fe/Si͑111͒ remains stable at least up to 350 K. Si segregation was observed after annealing at 400 K. LT-grown Fe films also reveal a relatively flat surface morphology with a roughness of 0.4-0.6 nm. Thus, LT-Fe films were suggested as an intermediate layer for the subsequent RT-growth of Fe. We use a single domain model of magnetic anisotropy to fit the magnetic coercivity evolution of n ML RT-Fe on 5 ML LT-Fe/Si͑111͒. Accordingly, we deduce the surface and volume-contributed magnetic anisotropy for discussion.

Oxygen surfactant-assisted growth and dewetting of Co films on O-3 × 3/W(111)

“…The consistence between the Co 776eV /W 170eV AES signal ratio of RT and LT-grown Co films also supports the 2-D growth mode of 300-200 K grown Co films on O-3 Â 3/W(111). 28,29 For comparison, our recent study of Ni/O-3 Â 3/W(111) shows the Ni 776eV /W 170eV Auger ratio increased more and more slowly with increasing Ni deposition (curvature < 0). 30 This suggests, in contrast to the 2D growth of Co, Ni preferred the 3-dimensional (3D) growth behavior on O-3 Â 3/W(111), which might be due to the large mismatch between Ni and W. Fig.…”

Influence of nanometer-sized interface on reaction of iron nanocrystals epitaxially grown on silicon substrates with oxygen gas

“…[15][16][17][18][19][20][21] However, it should be noted that through the use of an interlayer of a SiO 2 with Si NWs, no silicidation was observed between the NC and Si substrate. During the Si deposition on the ultrathin SiO 2 film, NWs were created in the ultrathin SiO 2 films through the following reaction: …”

“…Epitaxial growth on Si substrates offers many advantages in terms of achieving regular crystal orientation. However, during the epitaxial growth of transition metals such as Fe on Si substrates, significant silicidation at the metal/Si interface has long been an issue, [13][14][15][16][17][18][19][20][21] where silicide formation at the interface randomizes the crystalline and electronic structure. The use of different buffer layers has been proposed to suppress silicide formation on Si substrates; however, avoiding silicidation remains challenging.…”

“…The use of different buffer layers has been proposed to suppress silicide formation on Si substrates; however, avoiding silicidation remains challenging. [15][16][17][18][19][20][21] An ultrathin SiO 2 film technique succeeded in the epitaxial growth of silicide NCs on Si substrates with a sharp interface: namely, there was no silicidation in Si substrates. [22][23][24] In this paper, we present the epitaxial growth technique of Fe NCs on Si substrates without silicidation by modifying the ultrathin SiO 2 film technique.…”

Стратификация границы раздела Fe/Si(001)2x1 отжигом смачивающего слоя

“…д.). Хотя известно, что снижение температуры подложки с 300 до 100 K [17][18][19][20] и снижение тепловой мощности паров металла [8] замораживают границу раздела и сдвигают все стадии роста в область меньшей толщины. Все это сделало невозможным обобщение результатов исследований различных авторов и групп.…”