Growth and Magnetic Properties of Epitaxial Fe(100) on S-Passivated GaAs(100)

Anderson, G. W.; Hanf, Marie-Christine; Norton, P. R.

doi:10.1103/physrevlett.74.2764

Cited by 57 publications

(27 citation statements)

References 20 publications

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“…Since the Faraday effect scales with the film thickness, ultrathin magnetic films can be used, such as MBE-grown Fe or Co (e.g. [58,59]). Also it is of interest to avoid the appearance of Iow-resistance spots in the devices, for example by edge passivation; this will allow for detailed studies of the current-voltage characteristics, and for studies of the voltage dependence of the spin-polarized tunnelling current.…”

Section: Discussionmentioning

confidence: 99%

Spin-dependent transport in metal/semiconductor tunnel junctions

Prins

Kempen

Leuken

et al. 1995

J. Phys.: Condens. Matter

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Abstract. This paper describes a model as well as experiments on spin-polarized tunnelling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to generate spin-polarized carriers. A transport model is presented that takes account of carrier capture in the semiconductor surface states, and describes the semiconductor surface in terms of a spin-dependent energy distribution function. The so-called surface spin-splitting can be calculated from the balance of the polarized electron and hole flow in the semiconductor subsurface region, the polarized tunnelling current across the tunnel barrier between the magnetic material and the semiconductor surface, and the spin relaxation at the semiconductor surface.Measurements are presented of the circular-polarization-dependent photocurrent (the socalled helicity asymmetry) in thin-film tunnel junctions of Co/Al203/GaAs. In the absence of a tunnel barrier, the helicity asymmetry is caused by magneto-optical effects (magnetic circular dichroism). In the case where a tunnel barrier is present, the data cannot be explained by magneto-optical effects alone; the deviations provide evidence that spin-polarized tunnelling due to optical spin orientation occurs. In Co/r-MnAl/AlAs/GaAs junctions no deviations from the magneto-optical effects are observed, most probably due to the weak spin polarization of r-MnAl along the tunnelling direction; the latter is corroborated by bandstructure calculations. Finally, the application of photoexcited GaAs for spin-polarized tunnelling in a scanning tunnelling microscope is discussed.

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Section: Discussionmentioning

confidence: 99%

Spin-dependent transport in metal/semiconductor tunnel junctions

Prins

Kempen

Leuken

et al. 1995

J. Phys.: Condens. Matter

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“…In the iodine system, 3-D growth is suppressed in favor of layer-by-layer growth: the iodine acts as a surfactant that promotes layer-by-layer (van der Merwe) growth. Such use of surfactants to promote epitaxial growth is known for other systems, e.g., [34].…”

Section: Discussionmentioning

confidence: 98%

Electrochemical quartz-crystal microbalance study of silver and copper electrodeposition on bare and iodine-covered platinum electrodes

Jeffrey

Storr

Harrington

2004

Journal of Electroanalytical Chemistry

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“…Various efforts have been made to suppress the outdiffusion of both Ga and As, including the passivation of the GaAs surface by interlayers of S, 15 Er, 16 and Al. 17 However, all these previous attempts have achieved only limited success, especially in blocking the As segregation, which remains a serious challenge.…”

Section: Introductionmentioning

confidence: 99%

Magnetism of pristine Fe films on GaAs(100)

et al. 2007

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We grew Fe films on GaAs͑100͒ at ϳ80 K to suppress interface alloying and As outdiffusion, and obtained kinetically stabilized, pristine Fe films. We studied their magnetic properties using both x-ray magnetic circular dichroism and the magneto-optic Kerr effect. The salient magnetic features are as follows. A 2.1-ML-thick Fe film is already ferromagnetic and exhibits perpendicular magnetic anisotropy ͑PMA͒. Moreover, a spin reorientation transition occurs in films with ϳ2.8 monolayer thickness. The PMA is attributable to preservation of the surface magnetic anisotropy by suppressing the As outdiffusion during the low-temperature growth of the Fe film. The PMA is associated with the enhancement of the orbital moment by only ϳ50% in contrast to values reported in some previous studies.

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Growth and Magnetic Properties of Epitaxial Fe(100) on S-Passivated GaAs(100)

Cited by 57 publications

References 20 publications

Spin-dependent transport in metal/semiconductor tunnel junctions

Spin-dependent transport in metal/semiconductor tunnel junctions

Electrochemical quartz-crystal microbalance study of silver and copper electrodeposition on bare and iodine-covered platinum electrodes

Magnetism of pristine Fe films on GaAs(100)

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