Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate

Abstract

Growing III-V semiconductor materials on Si substrates for opto-electronic applications is challenging because their high lattice mismatch and different thermal expansion coefficients cause the epitaxial layers to have low quality. Here we report the growth of a high-quality AlN template on a micro-circle-patterned Si substrate by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques. Then, we fabricated and characterized a deep-ultraviolet light-emitting diode (UV-LED) device using this AlN/patterned Si. By using standard lithography and inductively coupled plasma etching, the Si substrate was prepared with very high pattern density and was made deep enough to grow a thick AlN template with high crystal quality and very few threading dislocations, allowing for further re-growth of the deep UV-LED device. And by combining a transparent p-AlGaN contact layer, an electron blocking layer and using this high quality AlN template: a deep UV-LED device fabricated and showed a strong single sharp electroluminescence (EL) peak at 325 nm and achieved an external quantum efficiency (EQE) of about 0.03%, for a deep UV-LED grown on Si substrate.

Fabrication and Characterization of Aluminum Nitride Nanoparticles by RF Magnetron Sputtering and Inert Gas Condensation Technique

“…Hence, it has attracted considerable attention of researchers due to its unique property applications in surface acoustic wave (SAW) devices, sensors, thin-film resonators, metal-oxide-semiconductors (MOS) [4], and microelectronic devices [5]. Other versatile applications are used in optoelectronic devices, for example, deep-ultraviolet light-emitting diodes and laser diodes [6], which can be used for a living environment [7]. Many regions of the world are suffering from the pollution of water; therefore, it is necessary to use sterilization systems to clean the water.…”

EFFECT OF AlN LAYERS ON THE AlxGa1-xN/GaN GROWN ON SAPPHIRE SUBSTRATES

“…The alloy of AlN and GaN and their alloy (AlxGa1-xN) have been intensively studied for decades [1][2][3][4][5][6] and they are very important materials for many applications in optoelectronic and power-electronic devices such as visible and ultraviolet light-emitting diodes, high electron mobility, solar cell, high-power electronic devices, field-effect transistor and high-speed electronic devices operating at high temperature and environments, etc. [7][8][9][10][11][12][13][14][15][16][17] AlxGa1-xN epitaxial layers are used for carrier confinement as electron blocking or barrier layers normally in laser and quantum-well ultraviolet light emitting diodes. [18][19][20] But there are a few publications on the properties of the AlxGa1-xN alloy and most of these papers are studied on the characteristics of AlxGa1-xN/GaN heterostructures having low Al composition values.…”

Growth of High-Quality GaN Films on Epitaxial AlN/Sapphire Templates

“…GaN, AlN, InN semiconductors are very attractive materials for many applications such as light emitting diodes, photodiodes, high power/frequency/high temperature devices. [1,2] Especially, sapphire has been widely used as a substrate for the growth of GaN films for decades. [3] However, it is difficult to grow high quality GaN films because of lattice constant and thermal expansion coefficient between GaN and sapphire substrate.…”

“…[4] Many growth methods have been applied to grow high quality GaN such as using thin AlN or GaN buffer layer deposited at low temperatures on sapphire substrates. [1][2][3][4][5][6] However, the GaN films grown on sapphire substrates used these methods still showed high dislocation densities and residual stresses. [5] Therefore, we need another method to suppress this problem.…”