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International audienceZnO nanocrystals with various sizes were prepared and characterized. Their photoluminescence dynamics has been investigated at low temperatures. For the smallest particles (3 nm), a defect-induced long-lived photoluminescence occurs around 2.5 eV which is slowed down at decay times longer than 3 ns when sample temperature T decreases. From thermal quenching of the 2.5 eV band, the exciton dissociation energy at defect centers is estimated around ∼11.8 meV. For larger crystallites (10 and 20 nm), the ultraviolet emission observed at 3.32 eV decays in less than 85 ps and follows a Varshni law [Y. P. Varshni, Physica (Amsterdam) 34, 149 (1967)]

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Aluminum nitride nanoparticles (AlN-NPs) were fabricated by a RF magnetron sputtering and inert gas condensation technique. By keeping the source parameters and sputtering time of 4 h fixed, it was possible to produce AlN-NPs with a size in the range of 2–3 nm. Atomic force microscopy (AFM), Raman spectroscopy, X-ray diffraction (XRD), and UV-visible absorption were used to characterize the obtained AlN-NPs. AFM topography images showed quazi-sphere nanoparticles with a size ranging from 2 to 3 nm. The XRD measurements confirmed the hexagonal wurtzite structure of AlN nanoparticles. Furthermore, the optical band gap was determined by the UV-visible absorption spectroscopy. The Raman spectroscopy results showed vibration transverse-optical modes A1(TO), E1(TO), as well as longitudinal-optical modes E1(LO), A1(LO).

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