Growth and electro‐optical characterization of ZnMgTe/ZnTe waveguide by molecular beam epitaxy

Abstract

ZnMgTe/ZnTe/ZnMgTe thin film waveguide with high crystal quality were grown by molecular beam epitaxy (MBE). The in‐plane mismatch between the ZnMgTe cladding layers and ZnTe core layer was about 0.02% which was measured by X‐ray reciprocal space mapping (RSM). It indicated that films were grown coherently with high crystal quality. The Electro‐Optical characterization of waveguide was evaluated using 1.55µm polarized lights and bias applied on the waveguide device from –15 V to +15 V. The de‐pendence of light phase shift passed though the waveguide on the applied voltage bias was studied. The electro‐optical characterization of the waveguide device was about 7% of the theoretical calculation. It could be improved by increasing the resistance ratio between the ZnMgTe/ZnTe/ZnMgTe waveguide structure and substrate so that the electric field applied on the waveguide structure could be improved. It was indicated that the ZnMgTe/ZnTe/ZnMgTe thin film waveguide has the potential to become a high efficiency electro‐optical device. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

A Bifunctional Optoelectronic Device for Photodetection and Photoluminescence Switching Based on Graphene/ZnTe/Graphene van der Waals Heterostructures

“…X-ray photoelectron spectroscopy (XPS, Figure 1i,j) further shows spin orbital splitting induced 2p 1/2 and 2p 3/2 states of Zn and 3d 3/2 and 3d 5/2 states of Te. 35 Meanwhile, two additional peaks We fabricated the Gr/ZnTe/Gr vdW heterostructures by sequentially stacking the flakes using a dry transfer method, as we previously reported. 41 The metal electrodes on the Gr layers were then patterned with a standard e-beam lithography process.…”

“…Zinc telluride (ZnTe), a P-type semiconductor with a direct band gap of 2.26 eV, , has been widely used in green-light-emitting devices, solar cells, waveguides, and photodetectors . Its vdW heterostructure has rarely been investigated due to the nonlayered crystal structure.…”

Influence of the lattice mismatch strain on the surface morphology of ZnMgTe/ZnTe/ZnMgTe electro-optical waveguide structure

“…The “almost coherent” waveguide structure was prepared with Zn 0.8 Mg 0.2 Te cladding layer since the Mg composition should be limited to 25% in order to maintain the crystallographic quality without the serious oxidation . However, the light propagation efficiency through the waveguide was insufficient and the leak of light at the interface (cladding/core) became a serious problem . The leak and the propagation loss could be eliminated by having thicker cladding layer or by having higher Mg composition, but those solutions would lead to the formation of “relaxed” waveguide structures and increasing defects in the structures.…”

Selective growth of ZnTe on sapphire substrates using a SiO2 mask

“…Zinc telluride (ZnTe) has attracted attention for use in various novel devices including light emitting diodes , photovoltaic cells , waveguides , and terahertz wave detectors . In particular, ZnTe‐based terahertz wave detectors based on the electro‐optic effect have been widely explored.…”