Growth and electrical properties of ZnO thin films deposited by novel ion plating method

Iwata, K.; Sakemi, Toshiyuki; Yamada, A.; Fons, Paul; Awai, K.; Yamamoto, Tetsuya; Matsubara, Masahiro; Tampo, Hitoshi; Niki, Shigeru

doi:10.1016/s0040-6090(03)01160-x

Cited by 54 publications

(33 citation statements)

References 10 publications

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“…A transparent conductive thin films including indium tin oxide (ITO) have many applications such as transparent electrodes, window materials in solar cell, light emitting diodes, flat panel displays and sensors [1][2][3][4][5]. However, high cost of ITO has motivated efforts to develop substitutes.…”

Section: Introductionmentioning

confidence: 99%

“…For ZnO films, many research groups have investigated the effects of annealing temperatures (T a ) on the structure and luminescence properties of ZnO films [27,28]. In this paper, we report the preliminary results on the growth of ZnO thin films on glass substrates using hydrated zinc acetate [Zn (CH 3 COO) 2 .4H 2 O] as precursor in ethanol with tri-ethylene glycol (TEG). The aim of the present study is to investigate the general features of the annealing effect of the prepared ZnO thin films.…”

Section: Introductionmentioning

confidence: 99%

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Studies on Structural, Optical and Electrical Properties of ZnO Thin Films Prepared by the Spray Pyrolysis Method

Nehru¹,

Umadevi²,

Sanjeeviraja³

2012

IJME

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Zinc oxide transparent thin films have been deposited on glass substrates by a pneumatic spray pyrolysis technique. Surface investigations such as AFM, SEM and XRD patterns of the films were investigated for as-deposited and annealed in air atmosphere. The morphology of the films is strongly related to the annealing temperature. By XRD, the amorphous phase is identified for as-deposited films and it changes to polycrystalline with the (1 0 0) and (1 0 1) as preferential crystallographic orientation for annealed samples. The as-deposited films exhibited highest optical transmittance and the direct band gap energy was found to vary from 3.23 to 3.07 eV with annealing temperatures. The electrical parameters of the samples were obtained by applying the dc four-probe technique. The effects of annealing environment on the luminescence characteristics of ZnO thin films were investigated by PL films are described here.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Studies on Structural, Optical and Electrical Properties of ZnO Thin Films Prepared by the Spray Pyrolysis Method

Nehru¹,

Umadevi²,

Sanjeeviraja³

2012

IJME

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“…We have reported high quality Ga-doped ZnO films at a high deposition rate (e.g. 170 nm/min) on large area substrate by reactive plasma deposition (RPD) method [6,7]. This method, an ion-plating method using dc arc-discharge plasma, is very attractive for the fabrication of ZnO thin films.…”

Section: Introductionmentioning

confidence: 99%

Photoconductivity of Ga doped polycrystalline ZnO films grown by reactive plasma deposition

Kishimoto

Hayashi

Hamaguchi³

et al. 2007

Physica Status Solidi (b)

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Photoconductivity and photo-absorption of polycrystalline Ga-doped ZnO (GZO) thin films with film thickness of 200 nm have evaluated compared with undoped ZnO films. The GZO and undoped ZnO thin films were deposited on alkali-free glass substrate at 200 °C by a reactive plasma deposition with DC arc discharge technique under an oxygen gas flow rate from 0 to 30 sccm. Undoped ZnO films with carrier concentration of 2.50 × 10 18 and 7.96 × 10 18 cm -3 have exciton absorption at about 3.28 eV. For these films, the photoconductivity peak is agreement with the photon-energy of exciton absorption in the optical-absorption. The optical band edge of undoped ZnO films estimated from the optical-absorption shows a shift to higher energy with increasing the carrier concentration. The increase of oxygen gas flow rate led to the resistivity change of GZO films from 2.15 × 10 -4 to 4.54 × 10 -3 Ω cm, corresponding to the carrier concentration change from 1.39 × 10 21 to 1.05 × 10 20 cm -3 . The photoconductivity of GZO film is larger than that of undoped ZnO film. The peak energy of photoconductivity spectra of GZO films are seen to little shift to higher energy with increasing the carrier concentration. The GZO film exhibited the larger photoconductivity at the wavelength, ranging widely less than 380 nm. GZO film with carrier concentration more than 1 × 10 21 cm -3 indicated much larger photoconductivity.

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“…The polycrystalline AZO films have been prepared by a variety of techniques such as reactive and nonreactive magnetron sputtering [6], high density plasma assisted (or superimposed) magnetron sputtering [7][8][9][10][11][12], chemical vapor deposition [13], pulsed-laser deposition [14], evaporation [15], spray-pyrolysis [16], Sol-gel preparation [17] and electrochemical deposition [18]. Among them, magnetron sputtering is one of the dominant deposition techniques for the deposition of good quality, large area coating with relatively low substrate temperature [6].…”

Section: Introductionmentioning

confidence: 99%

Deposition of Aluminum-Doped ZnO Films by ICP-Assisted Sputtering

Matsuda

Hirashima

Mine

et al. 2013

ZnO Nanocrystals and Allied Materials

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Inductively coupled plasma (ICP) assisted DC sputter-deposition was used for the deposition of Al-doped ZnO (AZO or ZnO:Al) thin films. With increasing ICP RF power, film properties including deposition rate, crystallinity, transparency and resistivity were improved. To understand the plasma-surface interaction, several plasma diagnostics were performed. Heat fluxes to the substrate were measured by thermal probes, number densities of sputtered metallic atom species were measured by absorption spectroscopy using hollow cathode lamps (HCL) and light emitting diodes (LEDs), and neutral gas temperatures were measured by external cavity diode laser (ECDL) absorption spectroscopy. As a result, it was revealed that the high density ICP heated the substrate through a high heat flux to the substrate, resulting in a high quality film deposition without the need for intentional substrate heating.The heat flux to the substrate was predominantly contributed by the plasma charged species, not by the neutral Ar atoms which were also significantly heated in the ICP. The substrate position where the highest quality films were obtained was found to coincide with the position where the substrate heat flux took the maximum value.

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Growth and electrical properties of ZnO thin films deposited by novel ion plating method

Cited by 54 publications

References 10 publications

Studies on Structural, Optical and Electrical Properties of ZnO Thin Films Prepared by the Spray Pyrolysis Method

Studies on Structural, Optical and Electrical Properties of ZnO Thin Films Prepared by the Spray Pyrolysis Method

Photoconductivity of Ga doped polycrystalline ZnO films grown by reactive plasma deposition

Deposition of Aluminum-Doped ZnO Films by ICP-Assisted Sputtering

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