Growth and characterization of quaternary (GaIn)(AsBi) layers for optoelectronic terahertz detector applications

Pačebutas, V.; Urbanowicz, Andrzej; Cicėnas, P.; Stanionytė, Sandra; Bičiūnas, Andrius; Nevinskas, Ignas; Krotkus, A.

doi:10.1088/0268-1242/30/9/094012

Cited by 21 publications

(6 citation statements)

References 20 publications

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“…Similar layers have been shown to produce THz radiation with a similar bandwidth when excited by longer wavelength sources, [ 76–78 ] including in the telecommunication C band. [ 79,80 ] In 2013, Heshmat et al benchmarked a GaAsBi‐based THz system against a commercially available LT–GaAs system and showed that it exhibited a larger bandwidth and a higher efficiency. [ 81 ] GaAsBi based PCAs are now commercially available.…”

Section: Recent Progress On Gaasbi Devicesmentioning

confidence: 99%

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

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GaAsBi has been researched as a candidate material for optoelectronic devices for around two decades. Bi‐induced localized states induce a rapid rising of the valence band edge through a band anticrossing interaction, which has a profound effect on the bandgap and the spin–orbit splitting. The band engineering possible, even with just a few percent bismuth, makes GaAsBi an attractive material for THz emitters, telecommunication lasers, and low noise photodetectors, among other devices. There has been substantial progress in some of these areas; however, progress toward many of the potential applications of GaAsBi has been hindered by device quality issues, brought about by the low substrate temperatures necessary for the growth of GaAsBi with sufficiently large Bi fractions. This review, presents an overview of the applications for which GaAsBi has been advocated and the key results in these areas. The molecular beam epitaxy growth and postgrowth processing of GaAsBi are then explored as well as the novel techniques that have been suggested to improve material quality.

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Section: Recent Progress On Gaasbi Devicesmentioning

confidence: 99%

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

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show abstract

“…The THz transient and its Fourier spectrum are measured when the emitter is biased at 10 V. Spectrum of the transient reaches frequencies larger than 3 THz, while its amplitude is comparable to that of THz transients obtained from LTG GaAs components under the same bias voltage. In 2015, the same group reported another photo-conductive THz detector fabricated by GaInAsBi on GaAs substrate [270]. Bismuth composition of GaInAs 1−x Bi x is characterized by XRD and EDX and reach unexpectedly high of about 10%.…”

Section: Photodetectorsmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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“…Similar layers have been shown to produce THz radiation with a similar bandwidth when excited by longer wavelength sources, [78][79][80] including in the telecommunication C band. [81,82] In 2013, Heshmat et al benchmarked a GaAsBi-based THz system against a commercially available LT-GaAs system and showed that it exhibited a larger bandwidth and a higher efficiency. [83] GaAsBi based PCAs are now commercially available.…”

Section: Thzmentioning

confidence: 99%

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2022

Physica Status Solidi (b)

View full text Add to dashboard Cite

GaAsBi has been researched as a candidate material for optoelectronic devices for around two decades. Bi-induced localized states induce a rapid rising of the valence band edge through a band anti-crossing interaction, which has a profound effect on the band gap and the spin orbit splitting. The band engineering possible, even with just a few percent bismuth, makes GaAsBi an attractive material for THz emitters, telecommunication lasers, and low noise photodetectors, among other devices. There has been substantial progress in some of these areas; however, progress towards many of the potential applications of GaAsBi has been hindered by device quality issues, brought about by the low substrate temperatures necessary for the growth of GaAsBi with sufficiently large Bi fractions. In this review, we present an overview of the applications for which GaAsBi has been advocated and the key results in these areas. We then explore the molecular beam epitaxy growth and post-growth processing of GaAsBi and the novel techniques that have been suggested to improve material quality. IntroductionReceived: ((will be filled in by the editorial staff))Revised: ((will be filled in by the editorial staff))

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Growth and characterization of quaternary (GaIn)(AsBi) layers for optoelectronic terahertz detector applications

Cited by 21 publications

References 20 publications

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

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