Growth and characterization of piezoelectric benzil single crystals and its application in microstrip patch antenna

Single crystals of 0.01 and 0.02 mol% crystal-violet dye doped triglycine sulfate (NH 2 CH 2 COOH) 3 H 2 SO 4 (TGS) have been grown by slow evaporation technique. Enhanced dielectric, optical, thermal and mechanical behavior has been achieved by dye doping. Monoclinic structures showing particular coloring pattern and morphology change with dye concentration were obtained. Various functional groups and dye incorporation in grown crystals were confirmed qualitatively by FTIR and Raman analysis. A significant increase in Curie temperature from 50 to 55 °C with decrease in maximum permittivity has been observed. UV-Vis spectra showed an increased transmittance window and increased optical band gap from 5.61 to 6.11 eV as a result of doping. Increase in the sharpness and intensity of photoluminescence peak with a blue shift have been observed in doped crystals. The thermal stability and the decomposition temperature were found to increase by about 10 °C in 0.01mol% dye doped TGS. The mechanical strength of the grown crystals was estimated by Vickers microhardness test and was found high for dye doped TGS. High piezoelectric charge coefficient d 33 of 16 pC/N was observed for pure TGS which decreased as a result of dye-effect. The fabrication of patch antenna was carried out after simulating its resonant frequency that makes it suitable for telecommunication applications. ABSTRACTSingle crystals of 0.01 and 0.02 mol% crystal-violet dye doped triglycine sulfate (NH 2 CH 2 COOH) 3 H 2 SO 4 (TGS) have been grown by slow evaporation technique. Enhanced dielectric, optical, thermal and mechanical behavior has been achieved by dye doping. Monoclinic structures showing particular coloring pattern and morphology change with dye concentration were obtained. Various functional groups and dye incorporation in grown crystals were confirmed qualitatively by FTIR and Raman analysis. A significant increase in Curie temperature from 50 to 55 °C with decrease in maximum permittivity has been observed. UV-Vis spectra showed an increased transmittance window and increased optical band gap from 5.61 to 6.11 eV as a result of doping. Increase in the sharpness and intensity of photoluminescence peak with a blue shift have been observed in doped crystals. The thermal stability and the decomposition temperature were found to increase by about 10 °C in 0.01mol% dye doped TGS. The mechanical strength of the grown crystals was estimated by Vickers microhardness test and was found high for dye doped TGS. High piezoelectric charge coefficient d 33 of 16 pC/N was observed for pure TGS which decreased as a result of dye-effect. The fabrication of patch antenna was carried out after simulating its resonant frequency that makes it suitable for telecommunication applications.

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“…32 Geometrical width of the patch antenna has been calculated as, It has contributed in many aspects from energy harvesting to sensors level.…”

Section: Patch Antenna Simulation and Fabricationmentioning

confidence: 99%

Performance of crystal violet doped triglycine sulfate single crystals for optical and communication applications

et al. 2015

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“…The crystal structure of the as-obtained product was characterized by XRD (Fig. The BFDH growth rate equation [31,34] EDS measurements were performed to determine the chemical composition of the samples.…”

Section: Resultsmentioning

confidence: 99%

Synthesis, microstructure, growth mechanism and photoluminescence of high quality [0001]-oriented InN nanowires and nanonecklaces

et al. 2015

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Novel indium nitride (InN) based nanomaterial is important for high speed electronics and infrared optoelectronics. In this paper, high quality Indium nitride (InN) nanostructures including nanowires and nanonecklaces, have been grown on one substrate by chemical vapor deposition. The morphologies and microstructures of InN nanowires and nanonecklaces were characterized, which confirmed their chemical composition as well as single crystallinity. The InN nanonecklaces consist of multiple beads composed of two equilateral truncated hexagonal cones faceted with { } 1 1 10 and { } 1 1 10 planes. The growth mechanism of the InN nanonecklace was studied and a three-step process was suggested for the growth. Finally, room temperature photoluminescence spectra of the two nanostructures showed the near band edge emissions of around 0.73 eV, where the emission from nanonecklace was found to be stronger, indicating the promise for near-infrared optoelectronics applications.Group III nitride semiconductors are extensively studied materials in the last two decades for broad technologies ranging from light emitters to fast electronics. Among them, much effort was dedicated to the study of InN for its distinguished physical and chemical properties [1][2][3][4][5] , especially the high electrical conductivity and electron mobility. These merits may lead to potential applications in high speed electronic devices, terahertz spectroscopy [6] , biosensors [7] , solar cells [8] , Fig. 5 TEM and HRTEM images of the InN nanowire and InN nanonecklace. (a) TEM image of an individual nanowire, (b) The corresponding HRTEM image and SAED pattern of the nanowire. (c) TEM image of an individual nanonecklace, (d) The corresponding HRTEM image and FFT pattern of the nanonecklace. (e) Space-filling model of ideal [0001] nanonecklace and schematic representation of Miller indexing of the various faces of crystal (left) and the corresponding crystal unit of the InN nanonecklace (right).Moreover, it should be noted that the above theoretical analysis is based on stoichiometric and ideal slow growth condition. In reality, the growth is also subject to other factors. In the case here, the In/N source ratio would render drastically different growth patterns like nanowires/nanonecklace. This phenomenon is commonly occurred in nanomaterial growth. For example, one CVD growth can yield six different morphologies in Gallium Sulfide structures [41] .Here the detailed theoretical analysis beyond BFDH method is not conducted, since this report is mainly focused on the experiment growth demonstration of peculiar InN nanostructures. 1 1 10 planes possess finite charges and dipole moments, they will give a rise to inversely positive and negative electrostatic surface energy. To keep the overall structure stable, the total surface free energy including the electrostatic surface energy and the surface

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“…[48][49] Mechanical strength, including voids, plays an important role in device fabrication. In order to study the mechanical property, the Vickers microhardness measurement was carried out on flat and smooth surfaces of grown SPNPD crystals at room temperature.…”

Section: Microhardness Analysismentioning

confidence: 99%

Structural, electrical, ferroelectric and mechanical properties with Hirshfeld surface analysis of novel NLO semiorganic sodium p-nitrophenolate dihydrate piezoelectric single crystal

et al. 2015

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Novel non-linear sodium para-nitrophenolate dihydrate (SPNPD) single crystals were grown by controlled evaporation method. Various functional groups and chemical bonding were identified by FTIR and Raman analysis. Hirshfeld surface and fingerprint plot were drawn and analyzed for the intermolecular interactions present in crystal structure. UV-visible studies indicate the high transmittance of crystals in visible region with a wide band gap 6.12 eV. In photoluminescence spectrum, a sharp broad emission peak centered at 525 nm indicates green emission. In dielectric study a broad peak with low dielectric constant value was observed at 34 °C which may be due to ferroelectric to paraelectric transition. Piezoelectricity was confirmed by determining the piezoelectric charge coefficient (d 33 =2.24 pC/N). The hysteresis loop with values of remnant polarization and coercive field as 2.67 µC/cm 2 and 7.43 kV/cm, respectively. Piezo-/ferroelectricity were reported for the first time in p-nitrophenolate based compounds. SHG efficiency of this material was found to be 4.15 times of that of KDP. Mechanical strength was confirmed from Vicker's microhardness study and voids volume. Thus promising piezoelectric, ferroelectric behavior of material along with high SHG efficiency and low dielectric constant, established SPNPD as a potential material for transducer, optoelectronics and nonvolatile memory devices applications.

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Growth and characterization of piezoelectric benzil single crystals and its application in microstrip patch antenna

Abstract: Solution and Cz grown benzil crystals were used for Hirshfeld surface analysis and fabrication of patch antenna.

Cited by 55 publications

References 49 publications

Performance of crystal violet doped triglycine sulfate single crystals for optical and communication applications

Performance of crystal violet doped triglycine sulfate single crystals for optical and communication applications

Synthesis, microstructure, growth mechanism and photoluminescence of high quality [0001]-oriented InN nanowires and nanonecklaces

Structural, electrical, ferroelectric and mechanical properties with Hirshfeld surface analysis of novel NLO semiorganic sodium p-nitrophenolate dihydrate piezoelectric single crystal

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