Growth and characterization of phosphorus doped n-type diamond thin films

Diamond thin films: a 21st-century material

“…This means that dopants which are routinely used to n-dope Si, such as P or As, cannot easily be used for diamond. The development of a successful n-doping process has taken a considerable time, and only very recently have a few reports appeared from a group in NIRIM claiming success in this area (Koizumi et al 1998;Sakaguchi et al 1999). Despite these difficulties, diamond-based devices are gradually beginning to appear, and may become the material of choice for electronic applications involving high power and/or high temperature.…”

Electronic States of Boron and Phosphorus in Diamond

“…The films were 1 mm thick, and doped during growth using phosphine in the reactant gas. The deposition parameters are described in the literature [19,20]. Hall effect measurements show an n-type conductivity and thermal activation energies of electrons of about 600 meV.…”

An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

“…4 Studies on diamond-containing phosphorous donors showed that the activation energy for conduction was 0.4-0.6 eV. 2,[5][6][7][8] Room-temperature mobility up to ~660 cm 2 V -1 s -1 for a single crystal diamond film with a phosphorus concentration of 7 × 10 16 cm -3 was achieved. 6 Inversion channel metal-oxide-semiconductor field-effect transistors were recently fabricated based on phosphorus-doped diamond.…”