Growth and characterization of nitride‐based distributed Bragg reflectors

Kruse, C.; Dartsch, H.; Aschenbrenner, T.; Figge, S.; Hommel, D.

doi:10.1002/pssb.201147174

Cited by 22 publications

(17 citation statements)

References 26 publications

(25 reference statements)

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“…As a result, instead of monolithic DBR MCs, hybrid nitride/dielectric DBR MCs 1,2,10 and all-dielectric DBR MCs 11,12 are often employed. Hybrid MCs, of course, still suffer from a narrow stop band [13][14][15][16] determined by the bottom nitride DBRs and all-dielectric DBR MCs usually involve complicate membrane lift-off and bonding process.…”

mentioning

confidence: 99%

Fabrication and optical properties of non-polar III-nitride air-gap distributed Bragg reflector microcavities

Tao

Arita

Kako

et al. 2013

Applied Physics Letters

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Using the thermal decomposition technique, non-polar III-nitride air-gap distributed Bragg reflector (DBR) microcavities (MCs) with a single quantum well have been fabricated. Atomic force microscopy reveals a locally smooth DBR surface, and room-temperature micro-photoluminescence measurements show cavity modes. There are two modes per cavity due to optical birefringence in the non-polar MCs, and a systematic cavity mode shift with cavity thickness was also observed. Although the structures consist of only 3 periods (top) and 4 periods (bottom), a quality factor of 1600 (very close to the theoretical value of 2100) reveals the high quality of the air-gap DBR MCs.

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confidence: 99%

Fabrication and optical properties of non-polar III-nitride air-gap distributed Bragg reflector microcavities

Tao

Arita

Kako

et al. 2013

Applied Physics Letters

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“…Non-polar VCSELs utilising DBRs, could provide additional degrees of freedom in laser design14, enhanced radiative efficiencies and higher optical gain15. However, the conventional approach to DBR fabrication in the polar nitrides, using alternating layers of different nitride alloys with different refractive index, is extremely challenging in the non-polar orientations1617, since there is no available alloy that will lattice match to non-polar GaN18 ( c -plane GaN can be lattice matched by the low-index In 0.18 Al 0.82 N192021.). Therefore, there is no simple epitaxial strategy to achieve crack-free and high reflectance non-polar GaN-based DBRs.…”

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confidence: 99%

Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification

Zhu

Liu

Ding

et al. 2017

Sci Rep

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Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. For many device applications, it is highly desirable to achieve not only high reflectivity and low absorption, but also good conductivity to allow effective electrical injection of charges. Here, we demonstrate the wafer-scale fabrication of highly reflective and conductive non-polar gallium nitride (GaN) DBRs, consisting of perfectly lattice-matched non-polar (11–20) GaN and mesoporous GaN layers that are obtained by a facile one-step electrochemical etching method without any extra processing steps. The GaN/mesoporous GaN DBRs exhibit high peak reflectivities (>96%) across the entire visible spectrum and wide spectral stop-band widths (full-width at half-maximum >80 nm), while preserving the material quality and showing good electrical conductivity. Such mesoporous GaN DBRs thus provide a promising and scalable platform for high performance GaN-based optoelectronic, photonic, and quantum photonic devices.

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“…19. The QD layer has been embedded into InAlN/GaN distributed Bragg reflectors (DBR) as described in the paper about DBRs and micro cavities within this issue [48]. The lower DBR has 40 periods of Bragg pairs, whereas the upper one consists just out of ten pairs, both are undoped.…”

Section: Lasermentioning

confidence: 99%

InGaN quantum dot growth in the limits of Stranski–Krastanov and spinodal decomposition

Figge

Tessarek

Aschenbrenner

et al. 2011

Physica Status Solidi (b)

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Most commonly used for the self-assembling of InGaN quantum dots is a Stranski-Krastanov growth scheme. Often neglected is the influence of spinodal decomposition, although it is frequently discussed with quantum well growth. In this publication we will expose the influence of both mechanisms on the formation process of quantum dots. This paper gives an insight in the theoretical background of quantum dot formation and covers the growth by molecular beam epitaxy and metal organic vapor phase epitaxy. Stranski-Krastanov like growth has been verified by the surface evolution beyond the critical thickness as seen by atomic force microscopy on uncapped samples. The overgrowth of such samples led to dissolution of the quantum dots. Indium compositions within the miscibility gap below critical thickness yielded spinodal phase separation in meander like structures These structures are in agreement with the theory from Hilliard and Cahn. Based on spinodal decomposition overgrowth schemes have been developed which showed reliable quantum dot emission. Such layers have been implemented into device structures such as LEDs and laser structures.

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Growth and characterization of nitride‐based distributed Bragg reflectors

Cited by 22 publications

References 26 publications

Fabrication and optical properties of non-polar III-nitride air-gap distributed Bragg reflector microcavities

Fabrication and optical properties of non-polar III-nitride air-gap distributed Bragg reflector microcavities

Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification

InGaN quantum dot growth in the limits of Stranski–Krastanov and spinodal decomposition

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