Growth and Characterization of Magnetic Transition Metal Overlayers on GaAs Substrates

Prinz, G. A.

doi:10.1007/978-1-4684-9145-6_17

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Semiconductor Substrates1

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1995

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Cited by 3 publications

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“…[ 14] Where the epitaxial growth of magnetic metal films on GaAs substratesis required, two contrasting techniques have been developed, one of which is applicable to the growth of specific intermetallic magnetic compounds, the other to the growth of a wide variety of artificially-layered magnetic metal structures containing elemental magnetic metals. This is because 3d transition metal elements and rare earths often react with the semiconductor forming interfacial compounds which modify or prevent epitaxy.…”

Section: Semiconductor Substratesmentioning

confidence: 99%

MBE Growth of Artificially-Layered Magnetic Metal Structures

Farrow¹,

Marks²,

Harp³

et al. 1995

Molecular Beam Epitaxy

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Section: Semiconductor Substratesmentioning

confidence: 99%

MBE Growth of Artificially-Layered Magnetic Metal Structures

Farrow¹,

Marks²,

Harp³

et al. 1995

Molecular Beam Epitaxy

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Magnetic properties of Fe/Zr multilayers

1994

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Measurements of ferromagnetic resonance (FMR), magnetic moment, and torque curves have been made for three series of FelZr multilayers (MLs) with thickness ratio of Fe to Zr sublayers equal to 2:1, 1:1, and 1:2, respectively. We show that Fe\Zr MLs readily yield to amorphization by a solid-state reaction (SSR) during the deposition process. Nevertheless, the resulting structure may be regarded as inhomogeneous one; there still exist some ferromagnetic phases that we relate to the Fe atoms in various surroundings.

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