Molecular Beam Epitaxy 1995
DOI: 10.1016/b978-081551371-1.50009-3
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MBE Growth of Artificially-Layered Magnetic Metal Structures

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Cited by 5 publications
(6 citation statements)
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“…Recently it has been demonstrated that the use of the seeded epitaxy method can alter the thin film structure in molecular beam epitaxy (MBE) deposition [1][2][3][4][5][6][7][8][9] and sputter deposition [10][11][12]. The key advantage of seeded epitaxy is that multiple crystal structures and/or orientations of a given element * Corresponding author.…”
Section: Introductionmentioning
confidence: 98%
“…Recently it has been demonstrated that the use of the seeded epitaxy method can alter the thin film structure in molecular beam epitaxy (MBE) deposition [1][2][3][4][5][6][7][8][9] and sputter deposition [10][11][12]. The key advantage of seeded epitaxy is that multiple crystal structures and/or orientations of a given element * Corresponding author.…”
Section: Introductionmentioning
confidence: 98%
“…An appropriate way to accommodate the different lattice parameters of the substrate and metallic film is the use of seed layers; they are deposited onto the substrate prior to the growth of the metal film. Seeded epitaxy has been known to be a useful method to improve thin film growth in molecular beam epitaxy (MBE) deposition [1][2][3][4][5][6][7] and sputter deposition [8][9][10]. The key advantage of seeded epitaxy is that one can stabilize multiple crystal structures or orientations of a given element by using a single crystal substrate by changing the initial buffer layer.…”
Section: Introductionmentioning
confidence: 99%
“…1000 A thick Co77Pt23 alloy films were deposited by MBE at various temperatures onto 10 A Pt buffer layers which were grown at 875 K on sapphire (0001) substrates. This results in high quality (111) [or (0001)] oriented alloy films [13]. The deposition chamber was maintained at a pressure < 4 x 10~1 0 mbar throughout growth.…”
mentioning
confidence: 99%