Growth and characterization of InSb on (1 0 0) Si for mid-infrared application

Jia, Bo; Tan, Kang Hai; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

doi:10.1016/j.apsusc.2018.01.219

Cited by 13 publications

(4 citation statements)

References 52 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…InSb has attracted growing attention in the field of integrated mid-infrared optoelectronics [22] and for topological quantum devices [23]. However, heterointegration of InSb [24][25][26] with any common semiconductor substrate is challenging due to its relatively large lattice parameter, a lattice mismatch of 19% to Si, resulting in a higher density of defects when integrated by common epitaxial techniques. InSb high electron mobility transistors [27] and monolithic InSb photodetectors [28] integrated on Si were realized through the use of thick buffer layers.…”

Section: Introductionmentioning

confidence: 99%

Improved quality of InSb-on-insulator microstructures by flash annealing into melt

et al. 2021

View full text Add to dashboard Cite

Monolithic integration of III-V semiconductors with Silicon technology has instigated a wide range of new possibilities in the semiconductor industry, such as combination of digital circuits with optical sensing and high-frequency communication. A promising CMOS compatible integration process is rapid melt growth (RMG) that can yield high quality single crystalline material at low cost. This paper represents the study on ultra-thin InSb-on-insulator microstructures integrated on a Si platform by a RMG-like process. We utilize flash lamp annealing (FLA) to melt and recrystallize the InSb material for an ultra-short duration (milliseconds), to reduce the thermal budget necessary for integration with Si technology. We compare the result from FLA to regular rapid thermal annealing (seconds). Recrystallized InSb was characterized using electron back scatter diffraction which indicate a transition from nanocrystalline structure to a crystal structure with grain sizes exceeding 1 μm after the process. We further see a 100× improvement in electrical resistivity by FLA annealed sample when compared to the as-deposited InSb with an average Hall mobility of 3100 cm 2 V −1 s −1 making this a promising step towards realizing monolithic mid-infrared detectors and quantum devices based on InSb.

show abstract

Section: Introductionmentioning

confidence: 99%

Improved quality of InSb-on-insulator microstructures by flash annealing into melt

et al. 2021

View full text Add to dashboard Cite

show abstract

“…Indium antimonide (InSb), another antimony-based monolayer material, has also been synthesized and characterized by MBE 28 . Besides, Jia et al 29 documented the fabrication of InSb on the Si-(100) substrate utilizing GaSb and AlSb buffers with high responsivity. On the other hand, it was found that InSb possesses unusual properties such as small electron effective mass, high charge density, robust spin-orbit interaction, and outstanding carrier mobility 30,32,33 .…”

mentioning

confidence: 99%

Novel two-dimensional AlSb and InSb monolayers with a double-layer honeycomb structure: a first-principles study

Bafekry

Faraji

Fadlallah

et al. 2021

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

“…Over time, the materials used for each of these detectors improved their performance. Today, the selenium Clark and Smith used in their first photoconductor has been replaced with lead salts [37], mercury-cadmium-telluride (MCT) [38] and indium antimonide (InSb) [39]. Bolometers have improved from the iron rods initially used by Langley to materials with strong insulator-semiconductor transitions such as vanadium dioxide [40].…”

Section: Materials Developmentmentioning

confidence: 99%

Solution-processable infrared photodetectors: Materials, device physics, and applications

Paramasivam

Vella

et al. 2021

Materials Science and Engineering: R: Reports

View full text Add to dashboard Cite

This review is written to introduce infrared photon detectors based on solution-processable semiconductors. A new generation of solution-processable photon detectors have been reported in the past few decades based on colloidal quantum dots, two-dimensional materials, organics semiconductors, and perovskites. These materials offer sensitivity within the infrared spectral regions and the advantages of ease of fabrication at low temperature, tunable materials properties, mechanical flexibility, scalability to large areas, and compatibility with monolithic integration, rendering them as promising alternatives for infrared sensing when compared to vacuum-processed counterparts that require rigorous lattice matching during integration. This work focuses on infrared detection using disordered semiconductors so as to articulate how the inherent device physics and behaviors are different from conventional crystalline semiconductors. The performance of each material family is summarized in tables, and device designs unique to solution-processed materials, including narrowband photodetectors and pixel-less up-conversion imagers, are highlighted in application prototypes distinct from conventional infrared cameras. We share our perspectives in examining open challenges for the development of solution-processable infrared detectors and comment on recent research directions in our community to leverage the advantages of solutionprocessable materials and advance their implementation in next-generation infrared sensing and imaging applications.among many other areas. Commercially available IR detectors are predominantly based on vacuum-processed inorganic compound semiconductors, which are structurally rigid, brittle, and require fabrication via complex epitaxial growth and costly processes. A new generation of solution-processable semiconductors have been reported in the past few decades including colloidal quantum dots (CQDs) [1,8,9], organic semiconductors (OSCs) [4,7,10,11], perovskites [1,12,13], and two-dimensional (2D) materials [5,14]. These materials offer sensitivity within the IR spectral regions and the advantages of ease of fabrication

show abstract

Growth and characterization of InSb on (1 0 0) Si for mid-infrared application

Cited by 13 publications

References 52 publications

Improved quality of InSb-on-insulator microstructures by flash annealing into melt

Improved quality of InSb-on-insulator microstructures by flash annealing into melt

Novel two-dimensional AlSb and InSb monolayers with a double-layer honeycomb structure: a first-principles study

Solution-processable infrared photodetectors: Materials, device physics, and applications

Contact Info

Product

Resources

About