Growth and characterization of indium oxide films

Prathap, P.; Devi, G. Gowri; Subbaiah, Y.P. Venkata; Reddy, K.T. Ramakrishna; Ganesan, V.

doi:10.1016/j.cap.2007.06.001

Cited by 72 publications

(31 citation statements)

References 40 publications

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“…The XRD patterns revealed a clear polycrystalline structure. The diffraction patterns consist of diffraction peaks related to the (bcc) structure of In 2 O 3 and corresponding to (211), (222), (400), (440) and (622) lattice planes correlating with the results obtained in [5]. The strongest diffraction peak is the peak related to the (222) lattice plane indicating corresponding preferential orientation along this direction.…”

Section: Resultssupporting

confidence: 66%

“…After annealing the lattice parameter drops below the theoretical value and is within the range of 1.001 and 1.006 nm. Such drastic changes are a common effect in sputtered oxide films [5] and can be attributed to out-diffusion of the implanted sputter gases, defect annealing and defectdefect interaction. Further reasons for the change in the lattice constants can be oxygen vacancy formation and differences in the thermal expansion coefficients between the substrate and the thin film.…”

Section: Resultsmentioning

confidence: 99%

“…In 2 O 3 thin films have a good adherence to the substrate surface and high chemical inertness [5]. In general, undoped binary oxide films are insulators in their stoichiometric form.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Structural Evolution of Sputtered Indium Oxide Thin Films

Hotovy¹,

Kups²,

Hotovy³

et al. 2010

Journal of Electrical Engineering

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The indium oxide thin films were deposited at room temperature by reactive magnetron sputtering in the mixture of oxygen and argon on silicon and oxidized silicon substrates. The influence of the oxygen flow in the reactive mixture and post-deposition annealing on the structural properties were investigated. The as deposited In 2 O 3 films showed a dominating randomly oriented nanocrystalline structure of cubic In 2 O 3 . The grain size decreased with increasing oxygen concentration in the plasma. Annealing in reducing atmospheres (vacuum, nitrogen and argon), besides improving the crystallinity, led to a partial cubic to rhombohedral phase transition in the indium oxide films.

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Section: Resultssupporting

confidence: 66%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Structural Evolution of Sputtered Indium Oxide Thin Films

Hotovy¹,

Kups²,

Hotovy³

et al. 2010

Journal of Electrical Engineering

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show abstract

“…%. The decrease in intensity at higher doping level is due to structural deformation in the crystal structure [9]. The 'shift' of strong (222) peak position to higher angle region is due to the residual stress developed in the films because of difference in the ionic radius between In 3+ (0.088 nm) and Zr 4+ (0.074 nm) [10].…”

Section: Structural Analysismentioning

confidence: 97%

Structural, optical and electrical properties of Zr-doped In 2 O 3 thin films

Manoharan

Jothibas²,

Jeyakumar³

et al. 2015

Spectrochimica Acta Part A: Molecular and Biomolecular Spectros

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“…6 shows good correlation between observed optical band gap and carrier concentration measured by Hall effect. Prathap et al [27] have observed widening in band gap of In 2 O 3 by varying the substrate temperature. It is reported that doping of CdO by titanium and aluminum can also widen the band gap of CdO films [28,29].…”

Section: Article In Pressmentioning

confidence: 97%