Growth and characterization of high-resistivity CdTe〈Cl〉

Korbutyak, D. V.; Krylyuk, Sergiy; Tkachuk, P. M.; Tkachuk, V. I.; Korbutjak, N.D; Raransky, M. D.

doi:10.1016/s0022-0248(98)00789-1

Cited by 16 publications

(15 citation statements)

References 9 publications

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“…The peak is located exactly at 1.590 eV for p-type and Pb-doped crystals, and at higher energies for the other dopants. Then, -type conductivity may be expected for every dopant with Pb-doped crystals as an exception [2], [14], [18].…”

Section: Resultsmentioning

confidence: 99%

“…Most of the CdTe and related ternary alloys, such as CdZnTe single crystals, are grown by the Bridgman and by the high-pressure Bridgman [2]- [7], Traveling Heater [4], [5], [8]- [12] and Markov methods [13]- [15]. This last method provides the best crystals with the best electrical and transport charge properties, but because it is not easy to implement, the Bridgman or the Traveling Heater Method are currently preferred.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, high-resistivity CdTe is commonly achieved by compensation with donor elements, such as Cl or Ge [2], [14], [16]- [18]. It has been reported that, in the case of Ge doping, Ge atoms are situated in the Cd sublattice, pinning the Fermi level close to the center of the band gap [18], and introducing a deep level at Ev -eV.…”

Section: Introductionmentioning

confidence: 99%

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Heavy metal doping of CdTe crystals

Saucedo

Fornaro

Sochinskii³

et al. 2004

IEEE Trans. Nucl. Sci.

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CdTe crystals doped with several heavy metals (Hg, Tl, Pb, and Bi) in the concentration range of 10 17 -10 18 at/cm 3 have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals was verified by chemical determination of etch pits density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration and foreign impurities. Low-temperature photoluminescence (PL) measurements were performed on the crystals in the 1.2-1.6 eV energy range. The crystals electrical properties were studied by Hall and I-V measurements. (D-X) and (DAP) lines dominate the PL spectra for CdTe crystals, suggesting -type conductivity and the presence of a compensation mechanism due to the heavy metal dopant incorporation. Investigating the 1.4 eV band, we obtained the Huang-Rhys parameter, the principal energy of zero phonon line and the energy of longitudinal optical phonon for each dopant. A particular PL line at 1.473 eV, correlated to M Te (M=heavy metal) defect centers, was found. It was found that the heavy metal-doped CdTe crystals have resistivity values in the range 10 8 -10 10 cm, with maximum values for Bi-and Hg-doped materials. Also, these materials show a higher dark current stability than the ones doped with the other heavy metals. Only detectors made from Hg-doped crystals gave response to X and radiation.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Heavy metal doping of CdTe crystals

Saucedo

Fornaro

Sochinskii³

et al. 2004

IEEE Trans. Nucl. Sci.

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“…This is confirmed by experiments where it is found that the concentration of the complex increases with an increase of the Cl-dopant concentration. 37,42 For the spontaneous formation of the (Cl T e -V C d ) −1 complex two Cl-dopants are needed (see Eq. (7)): 2Cl ⇒ Cl 16 cm −3 we thus expect the above self-compensation reaction to be the dominating process.…”

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confidence: 99%

Cl-doping of Te-rich CdTe: Complex formation, self-compensation and self-purification from first principles

et al. 2015

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The coexistence in Te-rich CdTe of substitutional Cl-dopants, ClTe, which act as donors, and Cd vacancies, VCd−1, which act as electron traps, was studied from first principles utilising the HSE06 hybrid functional. We find ClTe to preferably bind to VCd−1 and to form an acceptor complex, (ClTe–VCd)−1. The complex has a (0,-1) charge transfer level close to the valence band and shows no trap state (deep level) in the band gap. During the complex formation, the defect state of VCd−1 is annihilated and leaves the Cl-doped CdTe bandgap without any trap states (self-purification). We calculate Cl-doped CdTe to be semi-insulating with a Fermi energy close to midgap. We calculate the formation energy of the complex to be sufficiently low to allow for spontanous defect formation upon Cl-doping (self-compensation). In addition, we quantitatively analyse the geometries, DOS, binding energies and formation energies of the (ClTe–VCd) complexes.

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“…The fabricated CdTe radiation detectors can be operated at room-temperature due to the favorable band gap (1.44 eV) and have been researched by various groups [1][2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

Choi

Kim

et al. 2016

Materials Science-Poland

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Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB) method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 10 19 cm −3 , 9.94 × 10 19 cm −3 and 1.99 × 10 20 cm −3 ) and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot). It was shown that Cl dopant suppressed the unwanted secondary (5 1 1) crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 10 20 cm −3 was above 10 10 Ω·cm.

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Growth and characterization of high-resistivity CdTe〈Cl〉

Cited by 16 publications

References 9 publications

Heavy metal doping of CdTe crystals

Heavy metal doping of CdTe crystals

Cl-doping of Te-rich CdTe: Complex formation, self-compensation and self-purification from first principles

Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

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