Growth and characterization of GaN single crystals

The process of GaN single crystal growth by the Na flux method with Na vapor

“…GaN single crystals can be grown by the Na flux method at temperatures 600-800 1C and N 2 pressures below 10 MPa [1][2][3][4][5][6]. These conditions are relatively manageable compared to those of other methods, for instance, hydride vapor phase epitaxy [7,8], high N 2 pressure solution growth [9][10][11], sublimation growth [12,13], ammonothermal growth [14,15] and melt slow cooling [16].…”

Single crystal growth of GaN using a Ga melt in Na vapor

“…The growth of GaN bulk single crystals has been attempted by various methods, for instance, hydride vapor phase epitaxy [5,6], high N 2 pressure solution growth [7][8][9], sublimation growth [10,11], ammonothermal growth [12,13], flux growth [14][15][16][17][18][19][20][21][22][23][24] and melt slow cooling [25]. We have studied the crystal growth of GaN by the Na flux method [14][15][16][17][18][19][20].…”

Molten salt-based growth of bulk GaN and InN for substrates.

“…The growth rates are high, but persistent control issues remain. 5 The difficulty lies in the fact that ammonia will crack at 300 o C and above, and the nature of the furnace is such that there are many hot surfaces other than the growth surface on which to crack the precursor, resulting in a deprivation of active nitrogen at the growth front.…”