Growth and characterization of GaAs epitaxial layers on Si/porous Si/Si substrate by chemical beam epitaxy

Abstract

The initial growth of GaAs films on a Si/porous Si/Si (SPS) substrate has been investigated using reflection high-energy electron diffraction. The morphology and the thickness have been examined by a Nomarski optical microscope and scanning electron microscope, respectively. The results of the low temperature photoluminescence studies have shown that a significant reduction in the residual thermal tensile stress can be achieved with reduced growth temperature. The 77 K photoluminescence spectra for GaAs/Si show a strain-induced splitting between the heavy and light hole valence bands which corresponds to a biaxial tensile stress of 2.45 kbar acting on the GaAs layer where the same for GaAs/SPS grown at 450 °C is 1.69 kbar. The results have shown that a SPS substrate with the combination of low temperature growth is a promising candidate for obtaining GaAs films with low stress.

Heteroepitaxial Growth of 3C-SiC on Silicon-Porous Silicon-Silicon (SPS) Substrates

“…(1)(2)(3)16) Similar results have been obtained for diamond films also. (5) In optoelectronic field, a large number of potential applications involve the use of porous silicon because of its luminescent properties.…”

Control of Crack Formation for the Fabrication of Crack-Free and Self-Isolated High-Efficiency Gallium Arsenide Photovoltaic Cells on Silicon Substrate

“…Theoretically, it was known that the cracking occurred when the elastic energy induced in an epitaxial GaAs layer on Si due to the mismatch in thermal expansion coefficient exceeded that required to generate two {1 1 0} surfaces [5]. In order to prevent the crack formation, several approaches such as the insertion of a strain compensated buffer layer and the use of a porous Si layer were proposed [14]- [16]. The use of controlled crack arrays in a silicon nitride thin film, generated by "V" notch-type patterns as stress concentrators initiating the cracking, was reported as an alternative nanoscale patterning method to replace electron beam lithography which is an expensive and slow process [17].…”

Formation and structure of mesoporous silicon

“…Следует отметить, что наиболее эффективные люминес-центные центры отождествляют с ионами РЗЭ, окруженными ше-стью ионами кислорода [2]. Высо-кий уровень люминесценции по-казывает пористый кремний, диф-фузионно легированный эрбием [8]. В связи с этим представляет инте-рес подробное исследование про-цесса диффузии эрбия в кремний в присутствии кислорода.…”

“…Благоприятное влияние буферного слоя мезопористого кремния было продемонстриро-вано для гомоэпитаксии пленок кремния [6], формирования пленок карбида кремния [7], эпитаксии пленок арсенида галлия [8], суль-фида свинца [9][10][11], теллурида свинца [12], селенида цинка [13], нитрида галлия [14] и некоторых других материалов. Буферные слои ПК могут быть однослойными или многослойными, состоящими из нескольких слоев с различной пористостью и толщиной.…”