Growth and characterization of epitaxial cubic boron nitride films on silicon

Doll, Gary L.; Sell, Jeffrey A.; Taylor, C. A.; Clarke, Roy

doi:10.1103/physrevb.43.6816

Cited by 123 publications

(23 citation statements)

References 10 publications

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“…[8][9][10][11][12][13] BN is well known as a material which has various phases such as hexagonal, cubic, and so on with growth methods and conditions. We characterized BN films synthesized by plasma-assisted chemical vapor deposition and found that the electron emission occurred from sulfur ͑S͒-doped BN films at a low electric field.…”

Section: ͓S0003-6951͑97͒00944-3͔mentioning

confidence: 99%

Electron emission from boron nitride coated Si field emitters

Sugino

Kawasaki

Tanioka

et al. 1997

Applied Physics Letters

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Electron emission characteristics of sulfur (S)-doped boron nitride (BN) films synthesized by plasma-assisted chemical vapor deposition (PACVD) are investigated. The BN film consists of hexagonal grains of 3 nm in size. The energy gap is estimated to be as wide as 6.0 eV from ultraviolet-visible optical transmission measurement. The electrical resistivity is reduced to 4.9×102 Ω cm. Si tip field emitters coated with the BN film are fabricated. The electron emission occurs at an electric field as low as 6 V/μm, while a high electric field of 20 V/μm is needed to emit electrons from the Si tip array without BN coating. It is deduced that the tunneling barrier height of 0.1 eV exists at the surface of the BN film.

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Section: ͓S0003-6951͑97͒00944-3͔mentioning

confidence: 99%

Electron emission from boron nitride coated Si field emitters

Sugino

Kawasaki

Tanioka

et al. 1997

Applied Physics Letters

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“…In PLD, substrate bias and nitrogen ion beams have been employed to enhance the deposition of c-BN. [13][14][15] It has been reported that the stoichiometric BN films have been deposited when low photon energy is used for the laser ablation but in such cases formation of h-BN is dominant. On the other hand, use of high energy photon beams enhanced the formation of c-BN phase but films possessed N deficiencies.…”

Section: Introductionmentioning

confidence: 99%

“…It has been reported that the BN films could be deposited by reactive KrF ͑248 nm͒ pulsed laser deposition ͑PLD͒, 11,13,14 ion assisted deposition 15 and plasma chemical vapor deposition. 12,16 BN films produced by the above methods have both cubic and hexagonal phases.…”

Section: Introductionmentioning

confidence: 99%

Field emission properties of BN coated Si tips by pulsed ArF laser deposition

Jayatissa¹,

Sato²,

Saito³

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Thin films of boron nitride (BN) were deposited by pulsed ArF laser ablation of a pyrolitic BN target in an N2 ambient with and without substrate bias and also in a nitrogen plasma. The structural property studies with infrared and reflection high-energy electron diffraction show that the films possess cubic BN and hexagonal or amorphous phase of BN. Deposition of cubic BN is enhanced by application of substrate bias whereas crystallinity is degraded by the introduction of nitrogen plasma. The field emission of electrons was tested for BN coated Si tips, and it was found that the field emission of electrons enhanced when the cubic BN was coated.

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“…12͒ and c-BN͑100͒ on Si͑100͒. 13 The latter is characterized by 3:2 commensurate lattice matching. To understand the growth of c-BN, it is very important to determine stable structures and properties of the c-BN surfaces.…”

Section: Introductionmentioning

confidence: 99%

First-principles study on energetics ofc-BN(001) reconstructed surfaces

Yamauchi

Tsukada

Watanabe³

et al. 1996

Phys. Rev. B

485

265

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Total energies of cubic boron nitride (c-BN͒ ͑001͒ surfaces are systematically studied for various reconstructed configurations by the local density-functional approach with ultrasoft pseudopotentials. Stable phases as a function of nitrogen chemical potential are predicted theoretically. We examine the validity of the electron counting ͑EC͒ rule, which plays an important role for the study of the GaAs surfaces, and obtain supplemental factors to determine stable surface structures. The results of the total-energy minimization calculation demonstrate that the EC rule holds very well within the models that contain at most one layer with defects and no interlayer N-N and B-B bonds, and that next to the EC rule, the electrostatic energy has the most important role in determining stable structures. Furthermore, in the nitrogen-rich region, we found that the EC rule does not hold, because the energy difference between the N-B and N-N bonds is larger than the energy gain from using the EC model. We suggest that the important factors for determining stable structures of the c-BN͑001͒ surface are N-B bond saturation, the EC rule, and electrostatic energy, whose effect decreases in this order. The difference between c-BN and GaAs surfaces is also discussed. ͓S0163-1829͑96͒01723-7͔

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Growth and characterization of epitaxial cubic boron nitride films on silicon

Cited by 123 publications

References 10 publications

Electron emission from boron nitride coated Si field emitters

Electron emission from boron nitride coated Si field emitters

Field emission properties of BN coated Si tips by pulsed ArF laser deposition

First-principles study on energetics ofc-BN(001) reconstructed surfaces

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