Growth and characterization of dual ion beam sputtered Cu2ZnSn(S, Se)4 thin films for cost-effective photovoltaic application

Sengar, Brajendra S.; Awasthi, Vishnu; Aaryashree, Aaryashree; Kumar, Shailendra; Mukherjee, C.; Gupta, Mukul; Mukherjee, Shaibal

doi:10.1016/j.solener.2016.09.016

Cited by 33 publications

(12 citation statements)

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“…Considering the intermediate compounds, Garcia-Llamas et al [161] observed an increase in the band gap energy with the Ge/Sn ratio, because of the partial substitution of Sn by Ge, and also with the Cu content, due to a decrease in the MVB, cases following the Vegard law for quaternary compounds. Sengar et al [163] identified the same increase in the E g value with the S/(S+Se) ratio, which is also expected considering the quaternary end compounds.…”

Section: Se and Band Structure Calculations In Kesteritessupporting

confidence: 61%

“…A similar effect has been also pointed out by Hirate et al [156] in Cu 2 ZnSnSe 4 about the Cu Zn acceptor defect, which pushes the MVB up, while the Sn Zn donor defect decreases the MCB. [161,162] and Cu 2 ZnSn(S, Se) 4 [163] have been characterized by means of SE, in either single crystal, polycrystalline, or thin film forms, from the imaginary part of the dielectric constant. It is interesting to note here that significant efforts are being focused on the analysis of thin films through the modeling of surface roughness, secondary phases, and intermediate layers, with SE emerging as a potential characterization technique for the confirmation of their presence in the growth process [158,163,167,168].…”

Section: Se and Band Structure Calculations In Kesteritesmentioning

confidence: 99%

“…In many of these works slight variations in the band gap value have been observed depending on the deviations from stoichiometry: in Cu 2 ZnSnS 4 and Cu 2 ZnSnSe 4 compounds in thin film form, an increase in the band gap with the Cu/(Zn+Sn) ratio was observed [155], including the intermediate Cu 2 ZnSn(S, Se) 4 compounds [163], probably due to a decrease in the MVB level because of a lower degree of hybridization between the Cu-d and (S, Se)-p states, consistent with the theoretical predictions. However, the opposite effect was pointed out by Levcenko et al [100] in Cu 2 ZnSnS 4 polycrystals.…”

Section: Se and Band Structure Calculations In Kesteritesmentioning

confidence: 99%

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Point defects, compositional fluctuations, and secondary phases in non-stoichiometric kesterites

et al. 2019

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The efficiency of kesterite-based solar cells is limited by various non-ideal recombination paths, amongst others by a high density of defect states and by the presence of binary or ternary secondary phases within the absorber layer. Pronounced compositional variations and secondary phase segregation are indeed typical features of non-stoichiometric kesterite materials. Certainly kesterite-based thin film solar cells with an offstoichiometric absorber layer composition, especially Cu-poor/Zn-rich, achieved the highest efficiencies, but deviations from the stoichiometric composition lead to the formation of intrinsic point defects (vacancies, anti-sites, and interstitials) in the kesterite-type material. In addition, a non-stoichiometric composition is usually associated with the formation of an undesirable side phase (secondary phases). Thus the correlation between off-stoichiometry and intrinsic point defects as well as the identification and quantification of secondary phases and compositional fluctuations in non-stoichiometric kesterite materials is of great importance for the understanding and rational design of solar cell devices. This paper summarizes the latest achievements in the investigation of identification and quantification of intrinsic point defects, compositional fluctuations, and secondary phases in non-stoichiometric kesterite-type materials.This work focuses on structural variations in kesterite-type compound semiconductors, in particular Cu/Zn disorder and intrinsic point defects, as well as on compositional variations, in particular stoichiometry deviations in the kesterite-type phase and the segregation of related binary and ternary phases.This review provides the vital approaches by discussing results and trends concerning intrinsic point defects and structural disorder, compositional fluctuations, and secondary phases on a macroscopic and microscopic scale and even on the nano-scale. Various analytical methods have been used in these studies.The review comprises five parts:A. Crystal structure, structural disorder, and intrinsic point defects in kesterites B. Raman spectroscopy investigations on kesterites OPEN ACCESS RECEIVED

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Section: Se and Band Structure Calculations In Kesteritessupporting

confidence: 61%

Section: Se and Band Structure Calculations In Kesteritesmentioning

confidence: 99%

Section: Se and Band Structure Calculations In Kesteritesmentioning

confidence: 99%

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Point defects, compositional fluctuations, and secondary phases in non-stoichiometric kesterites

et al. 2019

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“…In addition, a directcurrent coupled assist-ion source, comprising of Ar + ion plasma, is utilized to reduce columnar growth and, thereby, boost film adhesion and growth uniformity. 27 GZO thin films are deposited by the Elettrorava DIBS system, where a sapphire substrate with an area of 10 × 10 mm 2 and thickness of 0.5 mm is used to measure the transmittance, and Si (110) substrate is used to perform other characterizations. Moreover, the assist source of DIBS system is the primary source of the formation of metal and metal oxide nanoclusters.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

Garg

Awasthi

Kumar

et al. 2018

ACS Appl. Mater. Interfaces

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The use of the high free-electron concentration in heavily doped semiconductor enables the realization of plasmons. We report a novel approach to generate plasmons in Ga:ZnO (GZO) thin films in the wide spectral range of ∼1.87-10.04 eV. In the grown GZO thin films, dual-ion beam sputtering (DIBS) instigated plasmon is observed because of the formation of different metallic nanoclusters are reported. Moreover, formation of the nanoclusters and generation of plasmons are verified by field emission scanning electron microscope, electron energy loss spectra obtained by ultraviolet photoelectron spectroscopy, and spectroscopic ellipsometry analysis. Moreover, the calculation of valence bulk, valence surface, and particle plasmon resonance energies are performed, and indexing of each plasmon peaks with corresponding plasmon energy peak of the different nanoclusters is carried out. Further, the use of DIBS-instigated plasmon-enhanced GZO can be a novel mean to improve the performance of photovoltaic, photodetector, and sensing devices.

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“…The optical properties of CZTS and CZTSe compounds have been studying extensively . There has also been a number of computational and experimental studies addressing structural, electronic, and optical properties of their mixtures, that is, CZTSSe. The highest efficiency attained so far for CZTSSe is 12.6%, which was achieved by partially substituting S anions with Se forming a band‐gap grading through the depth of the film with optical gaps ranging from 1.1 to 1.5 eV.…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of Cu₂ZnSn(S_xSe_1‐x)₄ by First‐Principles Calculations

Zamulko

Berland

Persson

2018

Physica Status Solidi (a)

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Structural, electronic, and optical properties of Cu 2 ZnSn(S x Se 1-x ) 4 semiconductors are studied theoretically for different concentration of S and Se anions. The optical properties are calculated at three levels of theory, in the generalized gradient approximation (GGA), meta-GGA, and with a hybrid functional. The GGA and meta-GGA calculations are corrected with an onsite Coulomb U d term. Lattice constants, dielectric constants, and band-gaps are found to vary almost linearly with the concentration of S. The authors also show that a dense sampling of the Brillouin zone is required to accurately account for the shape of the dielectric function, which is hard to attain with hybrid functionals. This issue is resolved with a recently developed k Áp based interpolation scheme, which allows us to compare results of the hybrid functional calculations on an equal footing with the GGA and meta-GGA results. We find that the hybrid functionals provide the overall best agreement with the experimental dielectric function.

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Growth and characterization of dual ion beam sputtered Cu2ZnSn(S, Se)4 thin films for cost-effective photovoltaic application

Cited by 33 publications

References 59 publications

Point defects, compositional fluctuations, and secondary phases in non-stoichiometric kesterites

Point defects, compositional fluctuations, and secondary phases in non-stoichiometric kesterites

Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

Optical Properties of Cu₂ZnSn(S_xSe_1‐x)₄ by First‐Principles Calculations

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Growth and characterization of dual ion beam sputtered Cu2ZnSn(S, Se)4 thin films for cost-effective photovoltaic application

Cited by 33 publications

References 59 publications

Point defects, compositional fluctuations, and secondary phases in non-stoichiometric kesterites

Point defects, compositional fluctuations, and secondary phases in non-stoichiometric kesterites

Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

Optical Properties of Cu2ZnSn(SxSe1‐x)4 by First‐Principles Calculations

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Optical Properties of Cu₂ZnSn(S_xSe_1‐x)₄ by First‐Principles Calculations